Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A memory device is formed in an interconnect structure over a substrate. Forming the memory device includes forming an alternating stack of dielectric material layers and conductive material layers, wherein the alternating stack includes a memory array region and a staircase region adjacent to the memory array region; forming a trench on the memory array region of the alternating stack; forming a data storage layer, channel layers, bit line pillars, and source line pillars in the trench; and performing patterning processes to from a staircase structure on the staircase region. The staircase structure steps downward from a first direction and makes a 180-degree turn to step downward in a second direction opposite to the first direction.

Abstract: A semiconductor storage cell structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor storage cell structure includes the following steps. A first transistor, which is a gate-all-around (GAA) structure, is formed. A second transistor is formed on the first transistor. An assistance gate layer is disposed above a storage node.

Abstract: A memory device includes an alternating stack of dielectric layers and word line layers, pairs of bit lines and source lines spaced apart from one another, a data storage layer covering a sidewall of the alternating stack, and channel layers interposed between the data storage layer and the pairs of bit lines and source lines. The alternating stack includes a staircase structure in a staircase-shaped region, and the staircase structure steps downward from a first direction and includes at least one turn. The pairs of bit lines and source lines extend in a second direction that is substantially perpendicular to the first direction and are in lateral contact with the data storage layer through the channel layers. A semiconductor structure and a method are also provided.

Abstract: In an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.

Abstract: In an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.

Abstract: A memory device includes a stack, a first conductive pillar and a second conductive pillar, a channel material and a ferroelectric (FE) material. The stack includes alternating a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers each includes a bulk layer, and the bulk layer includes a first metal layer and a second metal layer connected to the first metal layer. The first conductive pillar and the second conductive pillar are through the stack and isolating each other. The channel material is disposed in the stack. The FE material is disposed between the channel material and the second metal layer. The FE material and the channel material are disposed between the second metal layer and the first conductive pillar, and between the second metal layer and the second conductive pillar.

Abstract: A method of manufacturing a memory cell includes the following steps. A channel material is formed to contact a source line and a bit line. A ferroelectric (FE) material is formed to contact the channel material. A word line is formed to contact the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.

Abstract: A semiconductor device may include a non-volatile memory cell structure that may be formed in a back end region of a semiconductor device. The non-volatile memory cell structure may include a floating gate structure in which a portion of a dielectric layer is included between a gate structure and a word line conductive structure. The separation of the gate structure and the word line conductive structure by the dielectric layer results in the gate structure being a floating gate structure. This enables a charge to be selectively stored on the gate structure, even when power is removed from the word line conductive structure. The non-volatile memory cell structure along with a volatile memory cell structure are provided in the back end region of the semiconductor device, such that caching and long-term storage may be performed in the back end region of the semiconductor device.

Abstract: Disclosed are an interposer substrate, a package structure and a manufacturing method of a package structure. In one embodiment, the interposer substrate includes a substrate, a bridge device in the substrate, a memory in the substrate and beside the bridge device and a through substrate via in the substrate and beside the bridge device and the memory.

Abstract: A capacitorless dynamic random access memory (DRAM) cell may include a plurality of transistors. At least a subset of the transistors may include a channel layer that approximately resembles an inverted U shape, an ohm symbol (?) shape, or an uppercase/capital omega (?) shape. The particular shape of the channel layer provides an increased channel length for the subset of the transistors, which may reduce the off current and may reduce current leakage in the subset of the transistors. The reduced off current and reduced current leakage may increase data retention in the subset of the transistors and/or may increase the reliability of the subset of the transistors without increasing the footprint of the subset of the transistors. Moreover, the particular shape of the channel layer enables the subset of the transistors to be formed with a top-gate structure, which provides low integration complexity with other transistors in the capacitorless DRAM cell.

Abstract: A method of manufacturing a memory cell includes the following steps. A channel material is formed to contact a source line and a bit line. A ferroelectric (FE) material is formed to contact the channel material. A word line is formed to contact the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.

Abstract: A first thin film transistor and a second thin film transistor include a semiconducting metal oxide plate located over a substrate, and a set of electrode structures located on the semiconducting metal oxide plate and comprising, from one side to another, a first source electrode, a first gate electrode, a drain electrode, a second gate electrode, and a second source electrode. A bit line is electrically connected to the drain electrode, and laterally extends along a horizontal direction. A first capacitor structure includes a first conductive node that is electrically connected to the first source electrode. A second capacitor structure includes a second conductive node that is electrically connected to the second source electrode.

Abstract: 3D memory array devices and methods of manufacturing are described herein. A method includes etching a first trench and a second trench in a multilayer stack, the multilayer stack including alternating dielectric layers and sacrificial layers. The method further includes forming a word line by replacing a sacrificial layer with a conductive material. Once the word line has been formed, a first transistor is formed in the first trench, the first transistor including a first channel isolation structure. A cut channel plug is formed in the second trench, a centerline of the cut channel plug being aligned with a centerline of the channel isolation structure. The method further includes forming a second transistor in the second trench adjacent the cut channel plug, the word line being electrically coupled to the first transistor and the second transistor.

Abstract: 3D memory array devices and methods of manufacturing are described herein. A method includes etching a first trench and a second trench in a multilayer stack, the multilayer stack including alternating dielectric layers and sacrificial layers. The method further includes forming a word line by replacing a sacrificial layer with a conductive material. Once the word line has been formed, a first transistor is formed in the first trench, the first transistor including a first channel isolation structure. A cut channel plug is formed in the second trench, a centerline of the cut channel plug being aligned with a centerline of the channel isolation structure. The method further includes forming a second transistor in the second trench adjacent the cut channel plug, the word line being electrically coupled to the first transistor and the second transistor.

Abstract: A first thin film transistor and a second thin film transistor include a semiconducting metal oxide plate located over a substrate, and a set of electrode structures located on the semiconducting metal oxide plate and comprising, from one side to another, a first source electrode, a first gate electrode, a drain electrode, a second gate electrode, and a second source electrode. A bit line is electrically connected to the drain electrode, and laterally extends along a horizontal direction. A first capacitor structure includes a first conductive node that is electrically connected to the first source electrode. A second capacitor structure includes a second conductive node that is electrically connected to the second source electrode.

Abstract: Provided is a memory cell including a channel material contacting a source line and a bit line; a ferroelectric (FE) material contacting the channel material; and a word line contacting the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer; and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.

Abstract: In an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.

Abstract: Provided is a memory cell including a channel material contacting a source line and a bit line; a ferroelectric (FE) material contacting the channel material; and a word line contacting the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer; and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.

Abstract: A memory device includes an alternating stack of dielectric layers and word line layers, pairs of bit lines and source lines spaced apart from one another, a data storage layer covering a sidewall of the alternating stack, and channel layers interposed between the data storage layer and the pairs of bit lines and source lines. The alternating stack includes a staircase structure in a staircase-shaped region, and the staircase structure steps downward from a first direction and includes at least one turn. The pairs of bit lines and source lines extend in a second direction that is substantially perpendicular to the first direction and are in lateral contact with the data storage layer through the channel layers. A semiconductor structure and a method are also provided.

Abstract: In an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.