Abstract: A semiconductor light-emitting device including a light-emitting semiconductor structure, a transparent dielectric pattern and an electrode pattern is provided. The light-emitting semiconductor structure includes a first semiconductor layer, a second semiconductor layer disposed opposite to the first semiconductor layer and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The transparent dielectric pattern is disposed above at least one portion of the light-emitting semiconductor structure. The electrode pattern is disposed above the transparent dielectric pattern. At least one cave is formed between the transparent dielectric pattern and the light-emitting semiconductor structure. The cave is disposed opposite to the electrode pattern. Moreover, a fabricating method of the semiconductor light-emitting device is also provided.

Abstract: A semiconductor light-emitting device including a light-emitting semiconductor structure, a transparent dielectric pattern and an electrode pattern is provided. The light-emitting semiconductor structure includes a first semiconductor layer, a second semiconductor layer disposed opposite to the first semiconductor layer and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The transparent dielectric pattern is disposed above at least one portion of the light-emitting semiconductor structure. The electrode pattern is disposed above the transparent dielectric pattern. At least one cave is formed between the transparent dielectric pattern and the light-emitting semiconductor structure. The cave is disposed opposite to the electrode pattern. Moreover, a fabricating method of the semiconductor light-emitting device is also provided.