Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A method includes forming a device region over a substrate; forming a first dielectric layer over the device region; forming an opening in the first dielectric layer; conformally depositing a first conductive material along sidewalls and bottom surfaces of the opening; depositing a second conductive material on the first conductive material to fill the opening, wherein the second conductive material is different from the first conductive material; and performing a first thermal process to form an interface region extending from a first region of the first conductive material to a second region of the second conductive material, wherein the interface region includes a homogeneous mixture of the first conductive material and the second conductive material.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: A pluggable optical packaging structure is provided, including: a substrate, a carrier ring, at least one optical connection assembly and a cover plate; the substrate includes at least one electronic integrated circuit (EIC) and at least one photonic integrated circuit (PIC); the carrier ring is located on the substrate, and the EIC and PIC are enclosed by the carrier ring; the optical connection assembly includes at least one socket, at least one connector, a plurality of optical fibers and at least one optical fiber array connector, the socket is located in a partial section of the carrier ring, the connector is in the socket, the optical fibers has one end coupled to the connector, the other end coupled to the fiber array connector, and is coupled to the PIC through the fiber array connector; the cover plate is located on the carrier ring and extends inwardly to above the PIC.

Abstract: A method for configuring a plurality of memory units and a plurality of logic units in an integrated circuit includes providing a plurality of predefined parameters of the plurality of memory units, parsing the plurality of predefined parameters to generate a plurality of parsed parameters, compiling the plurality of memory units and the plurality of logic units at the same stage to generate a plurality of candidates of mapping results according to the plurality of parsed parameters, selecting a candidate of the mapping results from the plurality of candidates of the mapping results, and disposing the plurality of memory units and the plurality of logic units onto the integrated circuit according to the candidate of the mapping results.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor substrate includes a semiconductor material over a base substrate. The semiconductor substrate has one or more sidewalls forming a crack stop trench that is laterally between a central region of the semiconductor substrate and a peripheral region of the semiconductor substrate that surrounds the central region. The peripheral region of the semiconductor substrate includes a plurality of cracks.

Abstract: An LDMOS transistor device includes a stepped isolation structure over a substrate, a gate electrode disposed over a portion of the stepped isolation structure, a source region disposed in the substrate, and a drain region disposed in the substrate. The stepped isolation structure includes a first portion having a first thickness, and a second portion having a second thickness greater than the first thickness. The second portion includes dopants. The drain region is adjacent to the stepped isolation structure.

Abstract: A speaker module, including: a speaker enclosure, including: a recessed portion; a transducer, including: a top surface; a bottom surface; a perimeter surface positioned between the top surface and the bottom surface; a rubber cap including: a top side; a bottom side; and edges extending between the top side and the bottom side, wherein the edges define an inside perimeter of the rubber cap and include a slot extending along the inside perimeter of the rubber cap, wherein, the transducer is coupled to the rubber cap such that the rubber cap surrounds the transducer and the perimeter surface of the transducer is positioned within the slot of the plurality of edges of the rubber cap, wherein, the transducer is coupled to the speaker enclosure such that the transducer is positioned within the recessed portion of the speaker enclosure and the rubber cap is positioned between the transducer and the speaker.

Abstract: A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A ceramic submount for a semiconductor device and a method for manufacturing the same are provided. The ceramic submount includes a ceramic core board, an electrode layer, and a solder unit. The electrode layer is disposed on one side of the ceramic core board. The solder unit includes a buffer containing layer and a soldering layer. A cross-section of the solder unit has an inversed-trapezoid shape. The buffer containing layer is disposed on a surface of the electrode layer. A receiving space is concavely formed on a top surface of the buffer containing layer, and the soldering layer is filled in the receiving space. The buffer containing layer surrounds the soldering layer.

Abstract: A damper device and an electronic apparatus are provided. The damper device includes a first holder, a first damper component and a first gel. The first damper component includes a first protrusion part and a first bar part. The first protrusion part includes a first surface. The first bar part includes a first free end and a first fixed end. The first protrusion part is fixed on the first free end, the first fixed end is fixed on the first holder and the first surface protrudes outward from the first free end. The first free end and the first protrusion part are inserted into the first gel, and the first gel moves along the radial direction of the first bar part relative to the first bar part.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: Disclosed is a method of manufacturing a multi-porous biomass carbon material, comprising: a material preparation step of preparing a raw material mixture by evenly mixing a biomass carbon source and an oxidant at a stirring temperature; a reduction-oxidation step of heating the raw material mixture in an oxygen-deficient environment and making the raw material mixture undergo a reduction-oxidation reaction to obtain an original product; a first-pickling-drying step of pickling the original product to obtain a first-pickling product, performing a drying treatment thereon to obtain a dried product; a heat treatment step of heating the dried product at a heat treatment temperature in an oxygen-deficient thereby obtaining a volatile-component-removed product; and a second-pickling-drying step of making the second-pickling product become the multi-porous biomass carbon material.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.

Abstract: A thermal compensation system for machine tools includes a thermal compensation-monitoring device and a cloud processing device. The thermal compensation-monitoring device receives a plurality of temperature signals of a workpiece and corresponding processing tolerance data to build or update a thermal compensation database. The cloud processing device provides a thermal compensation model, and applies the model with the characterized temperature signals and the tolerance data to generate a compensation value so as to decide whether or not to modify the model or to run a compensation is necessary.