Abstract: The present invention provides a measuring apparatus for measuring a wafer carrier having an opening end and at least one gas tower deposited inside, the measuring apparatus comprising a carrying interface for securing the wafer carrier. The opening end of the wafer carrier faces an inspection space of measuring apparatus. The carrying interface having a gas supplying assembly connected to a base of the wafer carrier so as to supply gas to the wafer carrier. The internal of the inspection space disposed a measuring assembly which is mainly used to measure gas flow rate from the gas tower in the accommodating space. The measuring assembly comprises a plurality of wind speed sensing elements and a plurality of displacement sensing element, which are fitted to the a second connecting element.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.

Abstract: The present disclosure provides a radar object recognition method, which includes steps as follows. The radar image generation is performed on radar data to generate a radar image; the radar image is inputted into an object recognition model, so that the object recognition model outputs a recognition result; the post-process is performed on the recognition result to eliminate recognition errors from the recognition result.

Abstract: A ceiling fan and a structure thereof are provided. The structure includes a blade holder, a plurality of blades, and a plurality of positioning elements. The blade holder includes a holder body and a plurality of support platforms. The holder body has a plurality of first matching structures spaced apart from each other. Each of the support platforms includes a first positioning structure. Each of the blades has a second matching structure and a second positioning structure. The second matching structures can be guided by the first matching structures, so that each of the blades is disposed at an installation position on one of the support platforms along an oblique track. When each of the blades is located at the installation position, the first positioning structures and the second positioning structures abut against each other.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: This invention relates to a middleware bridge system, for bridging a kernel space module and a user space middleware having a user space interface, including: a kernel space bridge manager, for providing a kernel space interface to receive function call request from the kernel space module; an user space bridge manager, for bringing a function call relating to the function call request to the user space middleware through the user space interface, and receiving a return data from the user space middleware; wherein the architecture of the kernel space interface is the same with the architecture of the user space interface. The present invention further includes a middleware bridge method thereof.

Abstract: This invention relates to a middleware bridge system, for bridging a kernel space module and a user space middleware having a user space interface, including: a kernel space bridge manager, for providing a kernel space interface to receive function call request from the kernel space module; an user space bridge manager, for bringing a function call relating to the function call request to the user space middleware through the user space interface, and receiving a return data from the user space middleware; wherein the architecture of the kernel space interface is the same with the architecture of the user space interface. The present invention further includes a middleware bridge method thereof.