Patents by Inventor Chia-Yuan Wang
Chia-Yuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12237398Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.Type: GrantFiled: June 4, 2021Date of Patent: February 25, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Ming Kuo, Po-Jen Chuang, Yu-Ren Wang, Ying-Wei Yen, Fu-Jung Chuang, Ya-Yin Hsiao, Nan-Yuan Huang
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Publication number: 20250063792Abstract: Gate isolation processes (e.g., gate-to-source/drain contact isolation) are described herein. An exemplary contact gate isolation process may include recessing (e.g., by etching) sidewall portions of a high-k gate dielectric and gate spacers of a gate structure to form a contact gate isolation (CGI) opening that exposes sidewalls of a gate electrode of the gate structure, forming a gate isolation liner along the sidewalls of the gate electrode that partially fills the CGI opening, and forming a gate isolation layer over the gate isolation liner that fills a remainder of the CGI opening. A dielectric constant of the gate isolation liner is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer may be less than a dielectric constant of the gate isolation layer.Type: ApplicationFiled: December 1, 2023Publication date: February 20, 2025Inventors: Jia-Chuan YOU, Chia-Hao CHANG, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20250054765Abstract: An integrated circuit includes a first nanostructure transistor having a first gate electrode and a second nanostructure transistor having a second gate electrode. A dielectric isolation structure is between the first and second gate electrodes. A gate connection metal is on a portion of the top surface of the first gate electrode and on a portion of a top surface of the second gate electrode. The gate connection metal is patterned to expose other portions of the top surfaces of the first and second gate electrodes adjacent to the dielectric isolation structure. A conductive via contacts the exposed portion of the top surface of the second gate electrode.Type: ApplicationFiled: October 30, 2024Publication date: February 13, 2025Inventors: Jia-Chuan YOU, Chia-Hao CHANG, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20250056867Abstract: An integrated circuit includes a nanosheet transistor having a plurality of stacked channels, a gate electrode surrounding the stacked channels, a source/drain region, and a source/drain contact. The integrated circuit includes a first dielectric layer between the gate metal and the source/drain contact, a second dielectric layer on the first dielectric layer, and a cap metal on the first gate metal and on a hybrid fin structure. The second dielectric layer is on the hybrid fin structure between the cap metal and the source/drain contact.Type: ApplicationFiled: October 30, 2024Publication date: February 13, 2025Inventors: Chia-Hao CHANG, Jia-Chuan YOU, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 12219747Abstract: SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of transistors at scaled IC technology nodes and relax limits on SRAM performance optimization imposed by FinFET-based SRAMs. GAA-based SRAM cells described have active region layouts with active regions shared by pull-down GAA transistors and pass-gate GAA transistors. A width of shared active regions that correspond with the pull-down GAA transistors are enlarged with respect to widths of the shared active regions that correspond with the pass-gate GAA transistors. A ratio of the widths is tuned to obtain ratios of pull-down transistor effective channel width to pass-gate effective channel width greater than 1, increase an on-current of pull-down GAA transistors relative to an on-current of pass-gate GAA transistors, decrease a threshold voltage of pull-down GAA transistors relative to a threshold voltage of pass-gate GAA transistors, and/or increases a ? ratio of an SRAM cell.Type: GrantFiled: August 12, 2021Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hao Pao, Chih-Chuan Yang, Shih-Hao Lin, Chih-Hsuan Chen, Kian-Long Lim, Chao-Yuan Chang, Feng-Ming Chang, Lien Jung Hung, Ping-Wei Wang
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Patent number: 9380957Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a shell and a turning structure. The shell includes a first contact and a second contact located at a first side of the shell; and a third contact. The turning structure, disposed on the shell, is utilized for adjusting the third contact to be located at the first side when the measurement device is in an EEG mode, and adjusting the third contact to be located at a second side of the shell when the measurement device is in an ECG mode, wherein the second side is substantially opposite to the first side.Type: GrantFiled: December 10, 2015Date of Patent: July 5, 2016Assignee: Wistron CorporationInventors: Chi-Chan Chiang, Chia-Yuan Wang, Chia-Liang Lai, Ting-Wen Liu, Chun-Chih Lai
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Publication number: 20160089034Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a shell and a turning structure. The shell includes a first contact and a second contact located at a first side of the shell; and a third contact. The turning structure, disposed on the shell, is utilized for adjusting the third contact to be located at the first side when the measurement device is in an EEG mode, and adjusting the third contact to be located at a second side of the shell when the measurement device is in an ECG mode, wherein the second side is substantially opposite to the first side.Type: ApplicationFiled: December 10, 2015Publication date: March 31, 2016Inventors: Chi-Chan Chiang, Chia-Yuan Wang, Chia-Liang Lai, Ting-Wen Liu, Chun-Chih Lai
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Patent number: 9282912Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a shell and a turning structure. The shell includes a first contact and a second contact located at a first side of the shell; and a third contact. The turning structure, disposed on the shell, is utilized for adjusting the third contact to be located at the first side when the measurement device is in an EEG mode, and adjusting the third contact to be located at a second side of the shell when the measurement device his in an ECG mode, wherein the second side is substantially opposite to the first side.Type: GrantFiled: February 11, 2014Date of Patent: March 15, 2016Assignee: Wistron CorporationInventors: Chi-Chan Chiang, Chia-Yuan Wang, Chia-Liang Lai, Ting-Wen Liu, Chun-Chih Lai
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Patent number: 9282909Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a first shell having ECG functionality and a second shell. The first shell includes a first contact and a second contact located at a first side of the first shell; and a third contact located at a second side of the first shell, wherein the second side of the first shell is substantially opposite to the first side of the first shell. The second shell includes a fixing device, for connecting with and fixing on the first shell; and a fourth contact, a fifth contact and a sixth contact, located at a first side of the second shell, for electrically connecting with the first contact, the second contact and the third contact respectively when the first shell is connected to and fixed on the fixing device, in order to perform EEG measurement.Type: GrantFiled: February 21, 2014Date of Patent: March 15, 2016Assignee: Wistron CorporationInventors: Chia-Yuan Wang, Chi-Chan Chiang, Ting-Wen Liu, Chun-Chih Lai, Chia-Liang Lai
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Patent number: 9140714Abstract: A bio-sensing device includes a first platform, a second platform, at least one first magnetic element, and at least one second magnetic element. The first platform is configured to support a microplate. The microplate has a plurality of wells, each of which stores a reagent and a plurality of microbeads. The second platform is movably placed below the first platform. The first and the second magnetic elements are respectively located on the second platform. The first magnetic element moves along with the second platform to magnetically attract the microbeads in the wells, the second magnetic element moves along with the second platform to demagnetize the microbeads in the wells, and magnetism of the first magnetic element is opposite to magnetism of the second magnetic element.Type: GrantFiled: September 12, 2013Date of Patent: September 22, 2015Assignee: Wistron CorporationInventors: Chia-Yuan Wang, Chi-Chan Chiang, Chih-Kuan Lin, Ting-Wen Liu
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Publication number: 20150080698Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a shell and a turning structure. The shell includes a first contact and a second contact located at a first side of the shell; and a third contact. The turning structure, disposed on the shell, is utilized for adjusting the third contact to be located at the first side when the measurement device is in an EEG mode, and adjusting the third contact to be located at a second side of the shell when the measurement device his in an ECG mode, wherein the second side is substantially opposite to the first side.Type: ApplicationFiled: February 11, 2014Publication date: March 19, 2015Applicant: Wistron CorporationInventors: Chi-Chan Chiang, Chia-Yuan Wang, Chia-Liang Lai, Ting-Wen Liu, Chun-Chih Lai
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Publication number: 20150080696Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a first shell having ECG functionality and a second shell. The first shell includes a first contact and a second contact located at a first side of the first shell; and a third contact located at a second side of the first shell, wherein the second side of the first shell is substantially opposite to the first side of the first shell. The second shell includes a fixing device, for connecting with and fixing on the first shell; and a fourth contact, a fifth contact and a sixth contact, located at a first side of the second shell, for electrically connecting with the first contact, the second contact and the third contact respectively when the first shell is connected to and fixed on the fixing device, in order to perform EEG measurement.Type: ApplicationFiled: February 21, 2014Publication date: March 19, 2015Applicant: Wistron CorporationInventors: Chia-Yuan Wang, Chi-Chan Chiang, Ting-Wen Liu, Chun-Chih Lai, Chia-Liang Lai
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Publication number: 20150010991Abstract: A bio-sensing device includes a first platform, a second platform, at least one first magnetic element, and at least one second magnetic element. The first platform is configured to support a microplate. The microplate has a plurality of wells, each of which stores a reagent and a plurality of microbeads. The second platform is movably placed below the first platform. The first and the second magnetic elements are respectively located on the second platform. The first magnetic element moves along with the second platform to magnetically attract the microbeads in the wells, the second magnetic element moves along with the second platform to demagnetize the microbeads in the wells, and magnetism of the first magnetic element is opposite to magnetism of the second magnetic element.Type: ApplicationFiled: September 12, 2013Publication date: January 8, 2015Applicant: Wistron CorporationInventors: Chia-Yuan Wang, Chi-Chan Chiang, Chih-Kuan Lin, Ting-Wen Liu
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Publication number: 20120253729Abstract: A test system, a test signal auxiliary device, and a test signal generation method thereof are disclosed. The test signal auxiliary device is used for providing a computer system to test a signal measurement device. The test signal auxiliary device includes a first signal input terminal used for receiving an analog test signal via a first audio port of the computer system. A filter module is used for filtering the analog test signal to produce a filtered signal. A first signal output terminal is used for outputting the filtered signal to the signal measurement device. A second signal input terminal is used for receiving a corresponding signal from the signal measurement device. A second signal output terminal is used for transmitting the corresponding signal to the computer system via a second audio port.Type: ApplicationFiled: July 13, 2011Publication date: October 4, 2012Applicant: Wistron CorporationInventors: Wen-Hui Shih, Chia-Yuan Wang, Huan-Chieh Hu, Ting-Wen Liu