Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A method for fabricating an interlayer conducting structure of a circuit board is proposed. The method includes providing a core layer, and a first insulating layer and a second insulating layer formed on the upper and lower surfaces of the core layer successively, forming a through hole penetrating the core layer and the first and second insulating layers, and filling the through hole with a conductive material; removing the second insulating layer, a portion of the conductive material in the through hole at a position corresponding to the second insulating layer, and the first insulating layer; and pressing a metal layer onto the first and second surfaces of the core layer such that the conductive material protruded from the through hole corresponding to the core layer is fully packed in the through hole, so as to form a conductive through hole.