Abstract: A semiconductor device includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure. The isolation feature is over the semiconductor substrate and surrounding an active region of the semiconductor substrate. The gate lines extend across the active region of the semiconductor substrate. The first gate structure is over the isolation feature. The first gate structure comprises a first gate line, a second gate line, and a first bridge portion, the first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.

Abstract: A manufacturing method of a silicon solar cell and the silicon solar cell thereof are provided. A silicon substrate formed with a doped layer on a light receiving surface thereof is provided. First and second dielectric layers are respectively formed on the light receiving surface and the rear surface of the silicon substrate. A patterned second dielectric layer with an opening and a groove in the silicon substrate are formed by partially removing the second dielectric layer and the silicon substrate. First and second electrode compositions are respectively formed on the light receiving surface and the rear surface, and the second electrode composition is filled into the groove. After performing a high temperature process to co-firing the silicon substrate and the first and second electrode compositions, a first electrode and a second electrode are respectively formed on the light receiving surface and the rear surface.