Abstract: A light-emitting device includes: an epitaxial structure having a first surface and a second surface opposite to the first surface, and including a first type semiconductor layered unit that includes a first type window layer and a first type ohmic contact layer disposed at one side of the first type window layer; an active layer; and a second type semiconductor layered unit. The first type window layer is disposed between the first type ohmic contact layer and the active layer. The first type ohmic contact layer contains a material represented by Alx1Gay1InP, where 0?x1?1, 0?y1?1. The first type window layer contains a material represented by Alx2Gay2InP, where 0<x2?1, 0?y2?1. The first type ohmic contact layer has an Al content lower than an Al content of the first type window layer. A light-emitting apparatus that includes a light-emitting device according to the disclosure is also disclosed.

Abstract: A power control system of a rack heat-dissipation system, which receives output voltages of a rack power supply and a module power supply, includes a first control module and a second control module operating in parallel. The first control module includes a first switching unit, a first voltage converting unit and a first monitoring unit. The second control module includes a second switching unit, a second voltage converting unit and a second monitoring unit. The first monitoring unit is connected to the rack power supply, the module power supply, the first switching unit and the first voltage converting unit, and the second monitoring unit is connected to the rack power supply, the module power supply, the second switching unit and the second voltage converting unit. The heat dissipation system can be kept in the normal operation even if one of the control modules is failed.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.

Abstract: An anti-fuse memory device includes an anti-fuse module, a reference current circuit and a controller. A write enable signal enables a write controller and a write buffer of the anti-fuse module to program a selected anti-fuse memory cell in an anti-fuse array of the anti-fuse module, and a timing controller of the anti-fuse module stops a program operation of the anti-fuse array after a sense amplifier of the anti-fuse module changes a state of a readout data signal for a predetermined time duration.

Abstract: A semiconductor package structure includes a base having a first surface and a second surface opposite thereto, wherein the base comprises a wiring structure, a first electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, a second electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, wherein the first electronic component and the second electronic component are separated by a molding material, a first hole and a second hole formed on the second surface of the base, and a frame disposed over the first surface of the base, wherein the frame surrounds the first electronic component and the second electronic component.

Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer has two adhering surfaces having a same area and a middle cross section located at a middle position between the two adhering surfaces. An area of the middle cross section is 115% to 200% of an area of any one of the two adhering surfaces. The adhesive layer can provide for light to travel therethrough, and enables the light therein to change direction and to attenuate. The sensor chip, the adhesive layer, and the light-permeable layer are embedded in the encapsulant, and an outer surface of the light-permeable layer is at least partially exposed from the encapsulant.

Abstract: A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a fixing adhesive layer disposed on the substrate, a sensor chip adhered to the fixing adhesive layer, an annular adhering layer disposed on the sensor chip, a light-permeable sheet adhered to the annular adhering layer, and a plurality of metal wires that are electrically coupled to the substrate and the sensor chip. The size of the light-permeable sheet is smaller than that of the sensor chip.

Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: A memory device includes a command decoder that implements security logic to detect a command sequence to read a security region of a memory array with continuous encrypted data and to output/input specific contexts for the data. Output/input of specific contexts can be during a dummy cycle to achieve greater performance. A host interfacing can, for example, execute a single command to both get the encrypted data and specific contexts that were used to encrypt the data. Our technology can implement transferring data on the system bus in ciphertext and encrypted by a different Nonce or a different session key than used in a previous transfer operation. In this way, data will be represented with different ciphertext on the bus at different sessions; thereby defending against a replay attack.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: A semiconductor package structure includes a substrate having a wiring structure. A first semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure. A second semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged side-by-side. Holes are formed on a surface of the substrate, wherein the holes are located within a projection of the first semiconductor die or the second semiconductor die on the substrate. Further, a molding material surrounds the first semiconductor die and the second semiconductor die, and surfaces of the first semiconductor die and the second semiconductor die facing away from the substrate are exposed by the molding material.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.

Abstract: An optical water-quality detection apparatus includes a detection device, a biofilm-inhibition light source, a detection light source and a sensor. The detection device includes a detection chamber. The biofilm-inhibition light source is disposed outside the detection chamber and configured to emit biofilm-inhibition light. The detection light source is disposed outside the detection chamber and configured to emit detection light. The sensor is configured to sense the detection light penetrating the detection chamber. A beam of the detection light and a beam of the inhibition light overlaps as penetrating the detection chamber.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.