Abstract: According to the present invention, a semiconductor device having superior electrical conductivity is provided. The semiconductor device of the present invention is provided with a base material, a semiconductor element, and an adhesive layer that adheres the base material and the semiconductor element while interposed there between. In the adhesive layer of the semiconductor device, a metal particle and an insulating particle are dispersed, and the metal particle has flaked shape or ellipsoidal/spherical shape. As the content percentage by volume of the metal particle in the adhesive layer is a and the content percentage by volume of the insulating particles in the adhesive layer is b, the content percentage (a+b) by volume of fillers in the adhesive layer is 0.20 or more and 0.50 or less and the content percentage a/(a+b) by volume of the metal particles in the fillers is 0.03 or more and 0.70 or less.