Patents by Inventor Chiaki Domoto
Chiaki Domoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230167586Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: ApplicationFiled: November 30, 2022Publication date: June 1, 2023Inventors: Mark P. D'EVELYN, Keiji FUKUTOMI, Drew W. CARDWELL, David N. ITALIANO, Chiaki DOMOTO
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Patent number: 10443149Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.Type: GrantFiled: January 29, 2015Date of Patent: October 15, 2019Assignee: KYOCERA CorporationInventors: Chiaki Domoto, Yutaka Kuba, Katsuaki Masaki, Yuuichiro Hayashi
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Patent number: 10151045Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.Type: GrantFiled: July 13, 2017Date of Patent: December 11, 2018Assignee: KYOCERA CORPORATIONInventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
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Publication number: 20180171506Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.Type: ApplicationFiled: January 18, 2018Publication date: June 21, 2018Inventors: Katsuaki MASAKI, Yutaka KUBA, Chiaki DOMOTO, Daisuke UEYAMA, Yuichiro HAYASHI
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Patent number: 9890470Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.Type: GrantFiled: January 30, 2013Date of Patent: February 13, 2018Assignee: KYOCERA CorporationInventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
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Publication number: 20180016703Abstract: A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.Type: ApplicationFiled: January 26, 2016Publication date: January 18, 2018Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
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Publication number: 20170370018Abstract: The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.Type: ApplicationFiled: January 19, 2016Publication date: December 28, 2017Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
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Publication number: 20170342592Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.Type: ApplicationFiled: July 13, 2017Publication date: November 30, 2017Applicant: KYOCERA CorporationInventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA, Daisuke UEYAMA, Kouji MIYAMOTO, Yuuichiro HAYASHI
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Patent number: 9777396Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.Type: GrantFiled: October 29, 2012Date of Patent: October 3, 2017Assignee: KYOCERA CORPORATIONInventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
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Publication number: 20170170279Abstract: A silicon carbide crystal ingot includes first crystal layers and second crystal layers, each being alternately disposed and all containing one of a donor and acceptor, wherein a concentration of the donor or the acceptor that at least one of the second crystal layers has is higher than a concentration of the donor or the acceptor that one of the first crystal layers has, the one of the first crystal layers being in contact with the at least one of the second crystal layers.Type: ApplicationFiled: February 27, 2015Publication date: June 15, 2017Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Kazuya SHIBATA, Shigehiko YAMAGUCHI, Daisuke UEYAMA
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Publication number: 20160340795Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.Type: ApplicationFiled: January 29, 2015Publication date: November 24, 2016Applicant: KYOCERA CorporationInventors: Chiaki DOMOTO, Yutaka KUBA, Katsuaki MASAKI, Yuuichiro HAYASHI
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Publication number: 20150211147Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.Type: ApplicationFiled: July 26, 2013Publication date: July 30, 2015Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
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Publication number: 20150068444Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.Type: ApplicationFiled: April 26, 2013Publication date: March 12, 2015Applicant: KYOCERA CORPORATIONInventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
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Publication number: 20150020730Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.Type: ApplicationFiled: January 30, 2013Publication date: January 22, 2015Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
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Publication number: 20140299046Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.Type: ApplicationFiled: October 29, 2012Publication date: October 9, 2014Applicant: KYOCERA CorporationInventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
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Patent number: 8593056Abstract: An electroluminescent device includes, for example, first to third optical output parts respectively corresponding to red, green, and blue colors and each having a light-emitting layer. A visibility spectrum curve has an inclination value corresponding to the first optical output part, an inclination value corresponding to the second optical output part, and an inclination value corresponding to the third optical output part. Each inclination value corresponds to an emission peak wavelength at which an emission spectrum of a light ray emitted from the light-emitting layer of the corresponding optical output part reaches a maximum intensity value. The inclination values have the following relationship: first optical output part>second optical output part>third optical output part. The emission spectra of the optical output parts have widths in the following relationship: first optical output part>second optical output part>third optical output part.Type: GrantFiled: October 9, 2009Date of Patent: November 26, 2013Assignee: LG Display Co., Ltd.Inventor: Chiaki Domoto
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Publication number: 20100044728Abstract: An electroluminescent device includes, for example, first to third optical output parts respectively corresponding to red, green, and blue colors and each having a light-emitting layer. A visibility spectrum curve has an inclination value corresponding to the first optical output part, an inclination value corresponding to the second optical output part, and an inclination value corresponding to the third optical output part. Each inclination value corresponds to an emission peak wavelength at which an emission spectrum of a light ray emitted from the light-emitting layer of the corresponding optical output part reaches a maximum intensity value. The inclination values have the following relationship: first optical output part>second optical output part>third optical output part. The emission spectra of the optical output parts have widths in the following relationship: first optical output part>second optical output part>third optical output part.Type: ApplicationFiled: October 9, 2009Publication date: February 25, 2010Applicant: Kyocera Display Institute Co., Ltd.Inventor: Chiaki Domoto
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Patent number: 7623199Abstract: An electroluminescent device includes, for example, first to third optical output parts respectively corresponding to red, green, and blue colors and each having a light-emitting layer. A visibility spectrum curve has an inclination value corresponding to the first optical output part, an inclination value corresponding to the second optical output part, and an inclination value corresponding to the third optical output part. Each inclination value corresponds to an emission peak wavelength at which an emission spectrum of a light ray emitted from the light-emitting layer of the corresponding optical output part reaches a maximum intensity value. The inclination values have the following relationship: first optical output part>second optical output part>third optical output part. The emission spectra of the optical output parts have widths in the following relationship: first optical output part>second optical output part>third optical output part.Type: GrantFiled: September 29, 2006Date of Patent: November 24, 2009Assignee: Kyocera CorporationInventor: Chiaki Domoto
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Publication number: 20070254184Abstract: According to one aspect of the present invention, an element substrate, a first electrode formed on the element substrate, an organic film formed on the first electrode, and a second electrode formed on the organic film are provided, and an upper surface of the first electrode is set in a predetermined plane direction in accordance with a crystal structure of a material forming the first electrode.Type: ApplicationFiled: February 27, 2007Publication date: November 1, 2007Applicant: KYOCERA CORPORATIONInventor: Chiaki DOMOTO
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Publication number: 20070076141Abstract: An electroluminescent device includes, for example, first to third optical output parts respectively corresponding to red, green, and blue colors and each having a light-emitting layer. A visibility spectrum curve has an inclination value corresponding to the first optical output part, an inclination value corresponding to the second optical output part, and an inclination value corresponding to the third optical output part. Each inclination value corresponds to an emission peak wavelength at which an emission spectrum of a light ray emitted from the light-emitting layer of the corresponding optical output part reaches a maximum intensity value. The inclination values have the following relationship: first optical output part >second optical output part >third optical output part. The emission spectra of the optical output parts have widths in the following relationship: first optical output part >second optical output part >third optical output part.Type: ApplicationFiled: September 29, 2006Publication date: April 5, 2007Applicant: KYOCERA CORPORATIONInventor: Chiaki Domoto