Abstract: Positional information (an estimate value in which a linear component of positional deviation amount is corrected) of each shot on a wafer is calculated by a statistical computation using actual measurement values of positional information of a plurality of sample shots on the wafer (step 488). And, a variation amount of a non-linear component of positional deviation amount is calculated at predetermined intervals with respect to each of a plurality of measurement shots including the sample shots (step 496), and judgment is made about the necessity of update of correction information based on magnitude of the calculated variation amount of a non-linear component of each measurement shot area (step 498). Therefore, comparing with the case when actual values of positional information of all shots on the wafer are obtained at least once in each lot in order to update a correction value, the number of shots subject to positional information measurement and the measurement time can be reduced without fail.

Abstract: To provide an exposure apparatus that allows an understanding of the condition of the apparatus and that can prevent a leakage or scattering of a liquid. The exposure apparatus (EX) includes a display apparatus (D) that indicates at least one of a status of filling of an optical path space (K1) of the exposure light (EL) with the liquid (LQ) and a status of recovering of the liquid (LQ) from the optical path space (K1).

Abstract: Positional information (an estimate value in which a linear component of positional deviation amount is corrected) of each shot on a wafer is calculated by a statistical computation using actual measurement values of positional information of a plurality of sample shots on the wafer (step 488). And, a variation amount of a non-linear component of positional deviation amount is calculated at predetermined intervals with respect to each of a plurality of measurement shots including the sample shots (step 496), and judgment is made about the necessity of update of correction information based on magnitude of the calculated variation amount of a non-linear component of each measurement shot area (step 498). Therefore, comparing with the case when actual values of positional information of all shots on the wafer are obtained at least once in each lot in order to update a correction value, the number of shots subject to positional information measurement and the measurement time can be reduced without fail.