Patents by Inventor Chiaki Yasumuro
Chiaki Yasumuro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10309005Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: GrantFiled: August 28, 2014Date of Patent: June 4, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuhiko Kojima, Hiroshi Sone, Atsushi Gomi, Kanto Nakamura, Toru Kitada, Yasunobu Suzuki, Yusuke Suzuki, Koichi Takatsuki, Tatsuo Hirasawa, Keisuke Sato, Chiaki Yasumuro, Atsushi Shimada
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Publication number: 20160251746Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.Type: ApplicationFiled: August 28, 2014Publication date: September 1, 2016Inventors: Yasuhiko KOJIMA, Hiroshi SONE, Atsushi GOMI, Kanto NAKAMURA, Toru KITADA, Yasunobu SUZUKI, Yusuke SUZUKI, Koichi TAKATSUKI, Tatsuo HIRASAWA, Keisuke SATO, Chiaki YASUMURO, Atsushi SHIMADA
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Patent number: 9406557Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.Type: GrantFiled: June 26, 2014Date of Patent: August 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Osamu Yokoyama, Cheonsoo Han, Takashi Sakuma, Chiaki Yasumuro, Tatsuo Hirasawa, Tadahiro Ishizaka, Kenji Suzuki
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Patent number: 9253862Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.Type: GrantFiled: October 2, 2013Date of Patent: February 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Tatsuo Hirasawa, Osamu Yokoyama, Chiaki Yasumuro, Toshiaki Fujisato, Ryota Yoshida, Takashi Sakuma, Cheonsoo Han
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Patent number: 8992686Abstract: Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.Type: GrantFiled: September 2, 2011Date of Patent: March 31, 2015Assignee: Tokyo Electron LimitedInventors: Atsushi Gomi, Yasushi Mizusawa, Tatsuo Hatano, Masamichi Hara, Kaoru Yamamoto, Satoshi Taga, Chiaki Yasumuro
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Publication number: 20150004784Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.Type: ApplicationFiled: June 26, 2014Publication date: January 1, 2015Inventors: Osamu YOKOYAMA, Cheonsoo HAN, Takashi SAKUMA, Chiaki YASUMURO, Tatsuo HIRASAWA, Tadahiro ISHIZAKA, Kenji SUZUKI
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Patent number: 8859422Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.Type: GrantFiled: January 26, 2012Date of Patent: October 14, 2014Assignee: Tokyo Electron LimitedInventors: Tadahiro Ishizaka, Atsushi Gomi, Takara Kato, Osamu Yokoyama, Takashi Sakuma, Chiaki Yasumuro, Hiroyuki Toshima, Tatsuo Hatano, Yasushi Mizusawa, Masamichi Hara, Kenzi Suzuki
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Publication number: 20140287163Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.Type: ApplicationFiled: June 6, 2014Publication date: September 25, 2014Inventors: Tadahiro ISHIZAKA, Atsushi GOMI, Takara FUKUSHIMA, Osamu YOKOYAMA, Takashi SAKUMA, Chiaki YASUMURO, Hiroyuki TOSHIMA, Tatsuo HATANO, Yasushi MIZUSAWA, Masamichi HARA, Kenzi SUZUKI
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Publication number: 20140090597Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Tatsuo HIRASAWA, Osamu YOKOYAMA, Chiaki YASUMURO, Toshiaki FUJISATO, Ryota YOSHIDA, Takashi SAKUMA, Cheonsoo HAN
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Publication number: 20140060572Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.Type: ApplicationFiled: August 26, 2013Publication date: March 6, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Chiaki YASUMURO, Takashi Sakuma, Osamu Yokoyama, Hiroyuki Toshima, Masamichi Hara, Cheonsoo Han, Morihiro Takanashi, Toshiaki Fujisato
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Publication number: 20130252417Abstract: A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.Type: ApplicationFiled: September 14, 2012Publication date: September 26, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Tadahiro ISHIZAKA, Jonathan Rullan, Osamu Yokoyama, Atsushi Gomi, Chiaki Yasumuro, Takara Kato, Tatsuo Hatano, Hiroaki Kawasaki
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Publication number: 20130237053Abstract: A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.Type: ApplicationFiled: September 26, 2011Publication date: September 12, 2013Applicant: Tokyo Electron LimitedInventors: Tadahiro Ishizaka, Takashi Sakuma, Tatsuo Hatano, Osamu Yokoyama, Atsushi Gomi, Chiaki Yasumuro, Toshihiko Fukushima, Hiroyuki Toshima, Masaya Kawamata, Yasushi Mizusawa, Takara Kato
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Patent number: 8408025Abstract: A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.Type: GrantFiled: August 4, 2009Date of Patent: April 2, 2013Assignee: Tokyo Electron LimitedInventors: Atsushi Gomi, Yasushi Mizusawa, Tatsuo Hatano, Masamichi Hara, Kaoru Yamamoto, Chiaki Yasumuro
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Patent number: 8399353Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.Type: GrantFiled: April 6, 2011Date of Patent: March 19, 2013Assignee: Tokyo Electron LimitedInventors: Tadahiro Ishizaka, Atsushi Gomi, Takara Kato, Osamu Yokoyama, Takashi Sakuma, Chiaki Yasumuro, Hiroyuki Toshima, Tatsuo Hatano, Yasushi Mizusawa, Masamichi Hara
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Publication number: 20120222782Abstract: In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring.Type: ApplicationFiled: August 27, 2010Publication date: September 6, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Atsushi Gomi, Yasushi Mizusawa, Tatsuo Hatano, Osamu Yokoyama, Tadahiro Ishizaka, Chiaki Yasumuro, Takara Kato
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Publication number: 20120196052Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.Type: ApplicationFiled: January 26, 2012Publication date: August 2, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Tadahiro ISHIZAKA, Atsushi GOMI, Takara KATO, Osamu YOKOYAMA, Takashi SAKUMA, Chiaki YASUMURO, Hiroyuki TOSHIMA, Tatsuo HATANO, Yasushi MIZUSAWA, Masamichi HARA, Kenzi SUZUKI
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Publication number: 20120196437Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.Type: ApplicationFiled: April 6, 2011Publication date: August 2, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Tadahiro ISHIZAKA, Atsushi GOMI, Takara KATO, Osamu YOKOYAMA, Takashi SAKUMA, Chiaki YASUMURO, Hiroyuki TOSHIMA, Tatsuo HATANO, Yasushi MIZUSAWA, Masamichi HARA
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Publication number: 20120064717Abstract: In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.Type: ApplicationFiled: September 12, 2011Publication date: March 15, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Takara KATO, Yasushi Mizusawa, Tatsuo Hatano, Atsushi Gomi, Chiaki Yasumuro, Osamu Yokoyama
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Publication number: 20120055403Abstract: Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.Type: ApplicationFiled: September 2, 2011Publication date: March 8, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Atsushi GOMI, Yasushi Mizusawa, Tatsuo Hatano, Masamichi Hara, Kaoru Yamamoto, Satoshi Taga, Chiaki Yasumuro
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Publication number: 20110203310Abstract: A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.Type: ApplicationFiled: August 4, 2009Publication date: August 25, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Atsushi Gomi, Yasushi Mizusawa, Tatsuo Hatano, Masamichi Hara, Kaoru Yamamoto, Chiaki Yasumuro