Abstract: A cybersecurity server receives an executable file that has bytecode and metadata of the bytecode. Strings are extracted from the metadata, sorted, and merged into data streams. The data streams are merged to form a combined data stream. A digest of the combined data stream is calculated using a fuzzy hashing algorithm. The similarity of the digest to another digest is determined to detect whether or not the executable file is malware or a member of a malware family.

Abstract: A cybersecurity server receives an executable file. The executable file is disassembled to generate assembly code of the executable file. High-entropy blocks and blocks of printable American Standard Code for Information Interchange (ASCII) characters are removed from the assembly code. Instructions of the assembly code are normalized, chunked, and merged into a data stream. The digest of the data stream is calculated using a fuzzy hashing algorithm. The similarity of the digest to a malicious digest is determined to evaluate the executable file for malware.

Abstract: A method for forming a pixel structure is provided. The method includes: forming a gate electrode layer on a substrate; forming a first insulating layer on the gate electrode layer and the substrate; forming a semiconductor layer on the first insulating layer; forming a pixel electrode layer on the first insulating layer and the semiconductor layer; forming a source/drain electrode layer on the pixel electrode layer, the semiconductor layer, and the first insulating layer; forming a second insulating layer on the semiconductor layer, the pixel electrode layer, the source/drain electrode layer, and the first insulating layer; and forming a common electrode layer on the second insulating layer, in which an orthogonal projection of the semiconductor layer on the substrate is complementary to an orthogonal projection of the common electrode layer on the substrate.

Abstract: A method for forming a pixel structure is provided. The method includes: forming a gate electrode layer on a substrate; forming a first insulating layer on the gate electrode layer and the substrate; forming a semiconductor layer on the first insulating layer; forming a pixel electrode layer on the first insulating layer and the semiconductor layer; forming a source/drain electrode layer on the pixel electrode layer, the semiconductor layer, and the first insulating layer; forming a second insulating layer on the semiconductor layer, the pixel electrode layer, the source/drain electrode layer, and the first insulating layer; and forming a common electrode layer on the second insulating layer, in which an orthogonal projection of the semiconductor layer on the substrate is complementary to an orthogonal projection of the common electrode layer on the substrate.

Abstract: An active device array substrate includes a substrate, an inspection circuit, pixel structures, a passivation layer, and conductive pads. The substrate has a display area and a peripheral area outside the display area. The inspection circuit is located on the substrate and includes inspection switches, inspection control lines, and inspection traces. Each of the inspection switches is located in the peripheral area and controlled by one of the inspection control lines. Each of the inspection traces is connected to one of the inspection switches and includes a first conductive wire segment and a second conductive wire segment. The second conductive wire segment is connected between the first conductive wire segment and one corresponding inspection switch. An electric conductivity of the second conductive wire segment is lower than an electric conductivity of the first conductive wire segment.

Abstract: An active device array substrate includes a substrate, an inspection circuit, pixel structures, a passivation layer, and conductive pads. The substrate has a display area and a peripheral area outside the display area. The inspection circuit is located on the substrate and includes inspection switches, inspection control lines, and inspection traces. Each of the inspection switches is located in the peripheral area and controlled by one of the inspection control lines. Each of the inspection traces is connected to one of the inspection switches and includes a first conductive wire segment and a second conductive wire segment. The second conductive wire segment is connected between the first conductive wire segment and one corresponding inspection switch. An electric conductivity of the second conductive wire segment is lower than an electric conductivity of the first conductive wire segment.

Abstract: An active element and a fabricating method thereof are provided. The active element includes a gate, a gate insulating layer, a channel, a source and a drain. The gate is disposed on a substrate. The gate insulating layer is disposed on the substrate and covers the gate. The gate insulating layer is divided into a first region having uniform thickness and a second region having uniform thickness. The thickness of the gate insulating layer in the first region is different from the thickness of the gate insulating layer in the second region. The channel is disposed on the gate insulating layer. The source and the drain are disposed on the gate insulating layer and separated from each other. The distribution region of the source and the drain is identical to the distribution region of the first region. The channel contacts with the source and the drain.

Abstract: The invention discloses a display apparatus, which includes a display panel, a first signal wiring layer, a second signal wiring layer and a third signal wiring layer. The first signal wiring layer, the second signal wiring layer and the third signal wiring layer are disposed within a frame area around the display panel. The first signal wiring layer, the second signal wiring layer and the third signal wiring layer are located on different horizontal levels. The first signal wiring layer, the second signal wiring layer and the third signal wiring layer are used for transmitting control signals to the display panel.

Abstract: A pixel structure includes a drain extension portion disposed on an islanding semiconductor layer, wherein the islanding semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the islanding semiconductor layer and the drain extension portion is increased, such that the distance between the gate line and the drain extension portion is enlarged, and the coupling capacitance between the gate line and the drain extension portion can be lowered. Therefore, the display panel with the pixel structure of the present invention can have low coupling capacitance so as to improve the flicker phenomena obviously.

Abstract: A repairable pixel structure includes a substrate, at least a data line, at least a gate line, a transparent pixel electrode, a TFT, and a transparent pre-repair electrode. The TFT includes a gate, a drain, and a source. The transparent pre-repair electrode is disposed corresponding to the electrode in a vertical direction and is electrically connected to the drain. When a broken circuit occurs in the pixel structure, a laser beam is provided to perform a welding process on the transparent pre-repair electrode for repairing the pixel structure.

Abstract: A display panel comprises a display area having a plurality of pixel units for displaying images; a driving circuit for driving the pixel units and being arranged outside the display area; a plurality of signal lines having unequal resistances, and being electrically connected between the display area and the driving circuit for transmitting signals; and a plurality of layer jumpers for compensating the resistances of the signal lines and being disposed on the signal lines so that each of the signal lines having a compensated resistance, wherein the layer jumpers are utilized for making the compensated resistances of the respective signal lines to match each other. The display panel is capable of improving image display quality and providing a higher efficiency of resistance compensation for a unit of layout space.

Abstract: A fabricating method of a pixel structure is provided, which uses the original processes of fabricating a thin film transistor to simultaneously fabricate a reflective layer with an uneven surface. In the fabrication process of the thin film transistor, a plurality of bumps are formed under the reflective layer which is to be formed later on. The bumps and a gate of the TFT are formed simultaneously or the bumps and a semiconductor layer of the TFT are formed simultaneously. In addition, by stacking layers on the bumps, the reflective layer formed on the bumps can have good uneven shapes on the surface thereon. Therefore, the fabricating method of a pixel structure has simple processes and low manufacturing costs, and can be used for fabricating a transflective pixel structure or a reflective pixel structure.

Abstract: Methods and devices are provided for measuring the concentration of target chemical analytes present in a biological system. Device configuration and/or measurement techniques are employed in order to reduce the effect of interfering species on sensor sensitivity. One important application of the invention involves a method and device for monitoring blood glucose values.

Abstract: A pixel structure includes a drain shielding extension portion disposed on a floating semiconductor layer, wherein the floating semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the floating semiconductor layer and the drain shielding extension portion is increased, such that the distance between the gate line and the drain shielding extension portion is enlarged, and the coupling capacitance between the gate line and the drain shielding extension portion can be lowered. Therefore, the display panel with the pixel structure of the present invention can have low coupling capacitance so as to improve the flicker phenomena obviously.

Abstract: A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode.

Abstract: A repairable pixel structure includes a substrate, at least a data line, at least a gate line, a transparent pixel electrode, a TFT, and a transparent pre-repair electrode. The TFT includes a gate, a drain, and a source. The transparent pre-repair electrode is disposed corresponding to the electrode in a vertical direction and is electrically connected to the drain. When a broken circuit occurs in the pixel structure, a laser beam is provided to perform a welding process on the transparent pre-repair electrode for repairing the pixel structure.

Abstract: A connection structure of a display panel and a flexible printed circuit board is provided. The connection structure includes the display panel, the flexible printed circuit board, and an anisotropic conductive film. The display panel includes a plurality of contact pads. Each of the contact pads includes a first metal layer, a first insulation layer, a second metal layer and a second insulation layer. The flexible printed circuit board is disposed on the contact pads of the display panel. The anisotropic conductive film is disposed between the flexible printed circuit board and the contact pads. The anisotropic conductive film is in direct contact with the exposed first metal layers and second metal layers of the contact pads.

Abstract: A fabricating method of a pixel structure is provided, which uses the original processes of fabricating a thin film transistor to simultaneously fabricate a reflective layer with an uneven surface. In the fabrication process of the thin film transistor, a plurality of bumps are formed under the reflective layer which is to be formed later on. The bumps and a gate of the TFT are formed simultaneously or the bumps and a semiconductor layer of the TFT are formed simultaneously. In addition, by stacking layers on the bumps, the reflective layer formed on the bumps can have good uneven shapes on the surface thereon. Therefore, the fabricating method of a pixel structure has simple processes and low manufacturing costs, and can be used for fabricating a transflective pixel structure or a reflective pixel structure.

Abstract: A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode.

Abstract: Methods and devices are provided for measuring the concentration of target chemical analytes present in a biological system. Device configuration and/or measurement techniques are employed in order to reduce the effect of interfering species on sensor sensitivity. One important application of the invention involves a method and device for monitoring blood glucose values.