Patents by Inventor Chian-Liang Lin

Chian-Liang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7233050
    Abstract: A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: June 19, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wei Zhang, Chian-Liang Lin, Jung-Chen Yang, Chia-Chun Hung, Shih-Min Liu
  • Publication number: 20060197171
    Abstract: A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
    Type: Application
    Filed: May 23, 2006
    Publication date: September 7, 2006
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Zhang, Chian-Liang Lin, Jung-Chen Yang, Chia-Chun Hung, Shih-Min Liu
  • Patent number: 7071019
    Abstract: A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: July 4, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Zhang, Chian-Liang Lin, Jung-Chen Yang, Chia-Chun Hung, Shih-Min Liu
  • Publication number: 20060057759
    Abstract: A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
    Type: Application
    Filed: September 16, 2004
    Publication date: March 16, 2006
    Inventors: Wei Zhang, Chian-Liang Lin, Jung-Chen Yang, Chia-Chun Hung, Shih-Min Liu