Patents by Inventor Chiang-Lang Yen

Chiang-Lang Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6916718
    Abstract: A method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode is deposited over the layer of gate oxide. The gate electrode is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N2/H2, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.
    Type: Grant
    Filed: July 3, 2003
    Date of Patent: July 12, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Lin Chen, Chiang-Lang Yen, Ling-Sung Wang
  • Publication number: 20040005750
    Abstract: A new method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode such as polyimide is deposited over the layer of gate oxide. The gate electrode and the layer of gate oxide are patterned. A layer of liner oxide is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N2/H2, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.
    Type: Application
    Filed: July 3, 2003
    Publication date: January 8, 2004
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Ying-Lin Chen, Chiang-Lang Yen, Ling-Sung Wang
  • Patent number: 6610571
    Abstract: A new method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode such as polyimide is deposited over the layer of gate oxide. The gate electrode and the layer of gate oxide are patterned. A layer of liner oxide is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N2/H2, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.
    Type: Grant
    Filed: February 7, 2002
    Date of Patent: August 26, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ying-Lin Chen, Chiang-Lang Yen, Ling-Sung Wang