Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A cobalt-chromium (Co-Cr) magnetic film electrodeposited on the surface of an aluminum alloy. A process for making an aluminum alloy electrodeposited a cobalt-chromium (Co-Cr) magnetic film comprises the steps of chemically polishing an aluminum alloy substrate, pretreating either with phosphate or with zincate and electrodepositing in a plating bath containing cobalt and chromium ions to prepare the cobalt-chromium thin film on the aluminum alloy. Chromium content in the film can be designed by adjusting the parameters of pretreatment and electroplating. The produced cobalt-chromium film can flexibly adjust the magnetic characteristics (e.g. coercive force (Hc) and ramanence magnetization (Mr)) and is suitable for use in a magnetic recorder. The chemical composition, adhesion, microhardness, magnetic properties of the deposits indicate that the Co-Cr films produced are satisfactory for magnetic recording service.