Patents by Inventor Chiang Y. Yang

Chiang Y. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of doping a semiconductor
    Patent number: 4392928
    Abstract: A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.
    Type: Grant
    Filed: January 26, 1982
    Date of Patent: July 12, 1983
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Chiang Y. Yang, Robert A. Rapp
  • Zirconium carbide as an electrocatalyst for the chromous/chromic REDOX couple
    Patent number: 4382116
    Abstract: Zirconium carbide is used as a catalyst in a REDOX cell for the oxidation of chromous ions to chromic ions and for the reduction of chromic ions to chromous ions. The zirconium carbide is coated on an inert electronically conductive electrode which is present in the anode fluid of the cell.
    Type: Grant
    Filed: May 22, 1981
    Date of Patent: May 3, 1983
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Randall F. Gahn, Margaret A. Reid, Chiang Y. Yang