Abstract: A method for forming a gate structure with a pulled-back conductive layer and the use of the method are provided. The method conducts a local, not global, pull-back process on the conductive layer of the gate structure at the position intended for contact window formation, wherein the pull-back process is conducted after rapid thermal oxidation to prevent CBCB short, CB open and/or CBGC short.

Abstract: A method for forming a gate structure with a pulled-back conductive layer and the use of the method are provided. The method conducts a local, not global, pull-back process on the conductive layer of the gate structure at the position intended for contact window formation, wherein the pull-back process is conducted after rapid thermal oxidation to prevent CBCB short, CB open and/or CBGC short.

Abstract: The present invention discloses s novel synthesis method of nickel fibers. The method of the present invention involves reducing nickel ions in an aqueous solution with a reducing agent in the presence of a base, a pH buffer, and a magnetic field or a surfactant at a temperature of 80-100° C. for a period of time, wherein a pH value of the aqueous solution is not less than 11.0 during the period of time, so that nickel fibers are formed in the aqueous solution. The nickel fibers synthesized in the present invention have a diameter ranging from sub-micron to microns, and a length up to centimeters.