Patents by Inventor Chiao-Han LEE
Chiao-Han LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088027Abstract: An integrated circuit includes an inductor that includes a first set of conductors in at least a first metal layer, and a guard ring enclosing the inductor. The guard ring includes a first conductor extending in a first direction, a second conductor extending in a second direction, and a first set of staggered conductors coupled to a first end of the first conductor and a first end of the second conductor. The first set of staggered conductors includes a second set of conductors in a second metal layer, a third set of conductors in a third metal layer and a first set of vias coupling the second set of conductors with the third set of conductors. The third metal layer is above the second metal layer. All metal lines in the second metal layer that are part of the guard ring extend in the first direction.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventors: Chiao-Han LEE, Chi-Hsien LIN, Ho-Hsiang CHEN, Hsien-Yuan LIAO, Tzu-Jin YEH, Ying-Ta LU
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Publication number: 20230378169Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprises a substrate, a first gate electrode, a second gate electrode, a first doped region, a second doped region, a third doped region, and a first interconnection structure. The substrate comprises a well region of a first conductive type. The first and second gate electrodes are disposed on the substrate. The first, second, and third doped regions are embedded within the well region and are of the first conductive type. The first interconnection structure electrically connects the first gate electrode and the second gate electrode. The first doped region and the second doped region are disposed on opposite sides of the first gate electrode.Type: ApplicationFiled: May 18, 2022Publication date: November 23, 2023Inventors: HO-HSIANG CHEN, CHI-HSIEN LIN, YING-TA LU, HSIEN-YUAN LIAO, HSIU-WEN WU, CHIAO-HAN LEE, TZU-JIN YEH
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Patent number: 11817385Abstract: An integrated circuit includes an inductor that includes a first set of conductive lines in a first metal layer, and is over a substrate, and a guard ring. The guard ring includes a first conductive line in a second metal layer, and extending in a first direction, a second conductive line extending in a second direction, and a first staggered line coupled between the first conductive line and the second conductive line. The first staggered line includes a second set of conductive lines in the second metal layer, and extends in the first direction, a third set of conductive lines in a third metal layer, and extends in the second direction, and a first set of vias coupling the second and third set of conductive lines together. All metal lines in the third metal layer that are part of the guard ring extend in the second direction.Type: GrantFiled: July 30, 2021Date of Patent: November 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Han Lee, Chi-Hsien Lin, Ho-Hsiang Chen, Hsien-Yuan Liao, Tzu-Jin Yeh, Ying-Ta Lu
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Publication number: 20230282644Abstract: A cell layout design for an integrated circuit. In one embodiment, the integrated circuit includes a dual-gate cell forming two transistors connected with each other via a common source/drain terminal. The dual-gate cell includes an active region, two gate lines extending across the active region, at least one first gate via disposed on one or both of the two gate lines and overlapped with the active region, and second gate vias disposed on one or both of the two gate lines and located outside the active region.Type: ApplicationFiled: June 30, 2022Publication date: September 7, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ho-Hsiang CHEN, Chi-Hsien LIN, Ying-Ta LU, Hsien-Yuan LIAO, Hsiu-Wen WU, Chiao-Han LEE, Tzu-Jin YEH
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Publication number: 20210358844Abstract: An integrated circuit includes an inductor that includes a first set of conductive lines in a first metal layer, and is over a substrate, and a guard ring. The guard ring includes a first conductive line in a second metal layer, and extending in a first direction, a second conductive line extending in a second direction, and a first staggered line coupled between the first conductive line and the second conductive line. The first staggered line includes a second set of conductive lines in the second metal layer, and extends in the first direction, a third set of conductive lines in a third metal layer, and extends in the second direction, and a first set of vias coupling the second and third set of conductive lines together. All metal lines in the third metal layer that are part of the guard ring extend in the second direction.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Inventors: Chiao-Han LEE, Chi-Hsien LIN, Ho-Hsiang CHEN, Hsien-Yuan LIAO, Tzu-Jin YEH, Ying-Ta LU
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Patent number: 11081444Abstract: An integrated circuit includes an inductor over a substrate and a guard ring surrounding the inductor. The guard ring includes a first staggered line, a first metal line extending in a first direction and a second metal line extending in a second direction different from the first direction. The first staggered line has a first end coupled to the first metal line, and a second end coupled to the second metal line. The first staggered line includes a first set of vias, a first set of metal lines in a first metal layer and a second set of metal lines in a second metal layer different from the first metal layer. The first set of vias coupling the first set of metal lines with the second of second metal lines.Type: GrantFiled: November 30, 2018Date of Patent: August 3, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Han Lee, Hsien-Yuan Liao, Ying-Ta Lu, Chi-Hsien Lin, Ho-Hsiang Chen, Tzu-Jin Yeh
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Publication number: 20190103354Abstract: An integrated circuit includes an inductor over a substrate and a guard ring surrounding the inductor. The guard ring includes a first staggered line, a first metal line extending in a first direction and a second metal line extending in a second direction different from the first direction. The first staggered line has a first end coupled to the first metal line, and a second end coupled to the second metal line. The first staggered line includes a first set of vias, a first set of metal lines in a first metal layer and a second set of metal lines in a second metal layer different from the first metal layer. The first set of vias coupling the first set of metal lines with the second of second metal lines.Type: ApplicationFiled: November 30, 2018Publication date: April 4, 2019Inventors: Chiao-Han LEE, Hsien-Yuan LIAO, Ying-Ta LU, Chi-Hsien LIN, Ho-Hsiang CHEN, Tzu-Jin YEH
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Patent number: 10163779Abstract: An integrated circuit comprises an inductor over a substrate and a guard ring surrounding the inductor. The guard ring comprises a plurality of first metal lines extending in a first direction and a plurality of second metal lines extending in a second direction. The second metal lines of the plurality of second metal lines are each coupled with at least one first metal line of the plurality of first metal lines. The guard ring also comprises a staggered line comprising a connected subset of at least one first metal line of the plurality of first metal lines and at least one second metal line of the plurality of second metal lines. The first metal lines of the plurality of first metal lines outside of the connected subset, the second metal lines of the plurality of second metal lines outside of the connected subset, and the staggered line surround the inductor.Type: GrantFiled: June 12, 2014Date of Patent: December 25, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Han Lee, Hsien-Yuan Liao, Ying-Ta Lu, Chi-Hsien Lin, Ho-Hsiang Chen, Tzu-Jin Yeh
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Publication number: 20150364417Abstract: An integrated circuit comprises an inductor over a substrate and a guard ring surrounding the inductor. The guard ring comprises a plurality of first metal lines extending in a first direction and a plurality of second metal lines extending in a second direction. The second metal lines of the plurality of second metal lines are each coupled with at least one first metal line of the plurality of first metal lines. The guard ring also comprises a staggered line comprising a connected subset of at least one first metal line of the plurality of first metal lines and at least one second metal line of the plurality of second metal lines. The first metal lines of the plurality of first metal lines outside of the connected subset, the second metal lines of the plurality of second metal lines outside of the connected subset, and the staggered line surround the inductor.Type: ApplicationFiled: June 12, 2014Publication date: December 17, 2015Inventors: Chiao-Han LEE, Hsien-Yuan LIAO, Ying-Ta LU, Chi-Hsien LIN, Ho-Hsiang CHEN, Tzu-Jin YEH
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Patent number: 8797104Abstract: A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.Type: GrantFiled: April 13, 2012Date of Patent: August 5, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsieh-Hung Hsieh, Yi-Hsuan Liu, Chiao-Han Lee, Tzu-Jin Yeh, Chewn-Pu Jou
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Publication number: 20130271223Abstract: A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.Type: ApplicationFiled: April 13, 2012Publication date: October 17, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsieh-Hung HSIEH, Yi-Hsuan LIU, Chiao-Han LEE, Tzu-Jin YEH, Chewn-Pu JOU
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Patent number: D1016698Type: GrantFiled: October 27, 2021Date of Patent: March 5, 2024Assignee: Foxtron Vehicle Technologies Co., Ltd.Inventors: Tse-Min Cheng, Ming-Chang Lin, Yuan-Jie He, Chiao-Chi Lin, Lu-Han Lee