Patents by Inventor CHIAO-JUNG LIN

CHIAO-JUNG LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR OBTAINING THE EQUIVALENT OXIDE THICKNESS OF A DIELECTRIC LAYER
    Publication number: 20240230710
    Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.
    Type: Application
    Filed: April 13, 2023
    Publication date: July 11, 2024
    Inventors: MAO-NAN CHANG, CHI-LUN LIU, HSUEH-LIANG CHOU, YI-SHAN WU, CHIAO-JUNG LIN, YU-HSUN HSUEH
  • METHOD FOR OBTAINING THE EQUIVALENT OXIDE THICKNESS OF A DIELECTRIC LAYER
    Publication number: 20240133918
    Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.
    Type: Application
    Filed: April 12, 2023
    Publication date: April 25, 2024
    Inventors: MAO-NAN CHANG, CHI-LUN LIU, HSUEH-LIANG CHOU, YI-SHAN WU, CHIAO-JUNG LIN, YU-HSUN HSUEH