Abstract: The invention provides a semiconductor structure, which comprises a first chip and a second chip attached to each other, wherein the first chip comprises a quantum dot pattern, and the second chip comprises a through silicon via (TSV), wherein the quantum dot pattern and the through silicon via are aligned with each other.

Abstract: A reaction system comprises at least one additive and at least one reaction base-plane for augmenting chemical reaction, photoelectrochemical reaction, photochemical reaction or electrochemical reaction. The reaction system further comprises at least one reaction substrate carried out to the chemical reaction, the photoelectrochemical reaction, the photochemical reaction or the electrochemical reaction with the at least one additive and the at least one reaction base-plane. The at least one additive is a kind of reaction enhancer added in the reaction system to improve, augment or accumulate the effeteness of at least one reaction result.

Abstract: Quantum dot-sensitized solar cell and manufacturing method thereof are provided. The proposed quantum dot-sensitized solar cell has a counter electrode with a PbS thin-film layer and a polysulfide electrolyte contacting the PbS thin-film layer.