Abstract: A light-emitting device including a substrate; a first conductivity semiconductor layer on the substrate; a first barrier on the first conductivity semiconductor layer; a well on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier on the well; and a second conductivity semiconductor layer on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.

Abstract: A light-emitting device including a substrate; a first conductivity semiconductor layer disposed on the substrate; a first barrier disposed on the first conductivity semiconductor layer; a well disposed on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier disposed on the well; and a second conductivity semiconductor layer disposed on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.

Abstract: A light-emitting device including a substrate; a first conductivity semiconductor layer disposed on the substrate; a first barrier disposed on the first conductivity semiconductor layer; a well disposed on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier disposed on the well; and a second conductivity semiconductor layer disposed on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.

Abstract: A method and a device for enhancing the solderability of a lead-free component are provided. The provided method is compatible with the conventional soldering process and is capable of improving the wetting ability of the solder so as to enhance the solderability and the ability of anti-oxidation thereof. Besides, it is also achievable for providing a recognizable lead-free device so as to prevent the process confusion.

Abstract: A method and a device for enhancing the solderability of a lead-free component are provided. The provided method is compatible with the conventional soldering process and is capable of improving the wetting ability of the solder so as to enhance the solderability and the ability of anti-oxidation thereof. Besides, it is also achievable for providing a recognizable lead-free device so as to prevent the process confusion.