Abstract: The present disclosure relates to a method for query expansion. The method comprises: a) receiving a current query having at least one search term; b) inputting the at least one search term of the current query to a set of one or more query expansion modules, wherein the query expansion modules are configured to predict expansion terms of input terms; c) receiving from the set of expansion modules candidate expansion terms of the search term; d) modifying the current query using at least part of the candidate expansion terms, resulting in a modified query having at least one modified search term, The method further comprises repeating steps b) to d) using the modified query as the current query, the repeating being performed until a predefined stopping criterion is fulfilled.

Abstract: An approach for determining a concatenated confidence value of a first class using an artificial-intelligence module (AI-module) for performing a classification based on the concatenated confidence value of the first class. The AI-module comprises a knowledge graph module, a machine learning module, and a weighting module. A processor determines a first confidence value of the first class as a first function of an input dataset using the machine learning module. A processor determines a second confidence value of the first class as a second function of the input dataset using the knowledge graph module. A processor determines the concatenated confidence value of the first class as a third function of the first confidence value of the first class, the second confidence value of the first class, and a value of a weighting parameter of the weighting module.

Abstract: The present disclosure relates to a method for query expansion. The method comprises: a) receiving a current query having at least one search term; b) inputting the at least one search term of the current query to a set of one or more query expansion modules, wherein the query expansion modules are configured to predict expansion terms of input terms; c) receiving from the set of expansion modules candidate expansion terms of the search term; d) modifying the current query using at least part of the candidate expansion terms, resulting in a modified query having at least one modified search term, The method further comprises repeating steps b) to d) using the modified query as the current query, the repeating being performed until a predefined stopping criterion is fulfilled.

Abstract: Apparatus, methods, and computer-readable media are provided for simultaneous feature extraction and dictionary learning from heterogeneous tissue images, without the need of prior local labeling. A convolutional autoencoder is adapted and enhanced to jointly learn a feature extraction algorithm and a dictionary of representative atoms. While training the autoencoder an image patch is tiled in sub-patches and only the highest activation value per sub-patch is kept. Thus, only a subset of spatially constrained values per patch is used for reconstruction. The deconvolutional filters are the dictionary elements, and only a deconvolution layer is used for these elements. Embodiments described herein may be provided for use in models for representing local tissue heterogeneity for better disease progression understanding and thus treating, diagnosing, and/or predicting the occurrence (e.g., recurrence) of one or more medical conditions such as, for example, cancer or other types of disease.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: Apparatus, methods, and computer-readable media are provided for simultaneous feature extraction and dictionary learning from heterogeneous tissue images, without the need of prior local labeling. A convolutional autoencoder is adapted and enhanced to jointly learn a feature extraction algorithm and a dictionary of representative atoms. While training the autoencoder an image patch is tiled in sub-patches and only the highest activation value per sub-patch is kept. Thus, only a subset of spatially constrained values per patch is used for reconstruction. The deconvolutional filters are the dictionary elements, and only a deconvolution layer is used for these elements. Embodiments described herein may be provided for use in models for representing local tissue heterogeneity for better disease progression understanding and thus treating, diagnosing, and/or predicting the occurrence (e.g., recurrence) of one or more medical conditions such as, for example, cancer or other types of disease.

Abstract: This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.

Abstract: This invention relates to an apparatus, system, and method for creating a high-k gate stack structure that includes a passivation layer. The passivation layer can be constructed from a deposition of silicon carbide. The silicon carbide provides robustness against oxidation, which can reduce the capacity of the stack. The silicon carbide is thermodynamically stable during the deposition process and results in a clean interface.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: A method comprising: providing a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: A method comprising: providing a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A waveguide structure comprising: a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: The present invention is notably directed to a resistive memory element comprising a resistively switchable material coupled to two conductive electrodes, wherein the resistively switchable material is an amorphous compound comprising carbon and oxygen. Moreover, the carbon and oxygen stoichiometric ratio can be within a range of 1:0.30 to 1:0.80.

Abstract: A waveguide structure comprising: a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: The present invention is notably directed to a resistive memory element comprising a resistively switchable material coupled to two conductive electrodes, wherein the resistively switchable material is an amorphous compound comprising carbon and oxygen. Moreover, the carbon and oxygen stoichiometric ratio can be within a range of 1:0.30 to 1:0.80.

Abstract: A semiconductor structure (1) comprises a dielectric layer (2) including a dielectric material having a dielectric constant higher than that of silicon oxide; a channel region (3) including a compound semiconductor material; a passivation layer (4) including a passivation material between the channel region (3) and the dielectric layer (2); and a barrier layer (5) including a barrier material between the dielectric layer (2) and the passivation layer (4) for reducing a chemical reaction of the dielectric material of the dielectric layer (2) with the passivation material of the passivation layer (4).