Patents by Inventor Chiara Sabbione
Chiara Sabbione has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11800820Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: GrantFiled: November 22, 2021Date of Patent: October 24, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Publication number: 20220165945Abstract: A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Chiara Sabbione, Guillaume Bourgeois, Anna-Lisa Serra
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Publication number: 20220165946Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Patent number: 11101430Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: GrantFiled: August 5, 2019Date of Patent: August 24, 2021Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Publication number: 20210249599Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.Type: ApplicationFiled: February 5, 2021Publication date: August 12, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Chiara Sabbione, Marie-Claire Cyrille, Camille Laguna
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Publication number: 20200052197Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: ApplicationFiled: August 5, 2019Publication date: February 13, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Patent number: 10403597Abstract: A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.Type: GrantFiled: June 29, 2016Date of Patent: September 3, 2019Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Paul Gondcharton, Lamine Benaissa, Bruno Imbert, Guillaume Rodriguez, Chiara Sabbione
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Publication number: 20180218999Abstract: A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.Type: ApplicationFiled: June 29, 2016Publication date: August 2, 2018Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Paul GONDCHARTON, Lamine BENAISSA, Bruno IMBERT, Guillaume RODRIGUEZ, Chiara SABBIONE
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Patent number: 9064783Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).Type: GrantFiled: October 24, 2012Date of Patent: June 23, 2015Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Chiara Sabbione, Lea Di Cioccio, Jean-Pierre Nieto, Laurent Vandroux
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Publication number: 20140342528Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).Type: ApplicationFiled: October 24, 2012Publication date: November 20, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Chiara Sabbione, Léa Di Cioccio, Jean-Pierre Nieto, Laurent Vandroux