Patents by Inventor ChiChung TAI

ChiChung TAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, related manufacturing method, and related electronic device
    Patent number: 10615259
    Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: April 7, 2020
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Li Liu, Xianyong Pu, Guangli Yang, Gangning Wang, ChiChung Tai, Hong Sun
  • SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
    Publication number: 20180076284
    Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.
    Type: Application
    Filed: November 20, 2017
    Publication date: March 15, 2018
    Inventors: Li LIU, Xianyong PU, Guangli YANG, Gangning WANG, ChiChung TAI, Hong SUN
  • Semiconductor device, related manufacturing method, and related electronic device
    Patent number: 9859372
    Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: January 2, 2018
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Li Liu, Xianyong Pu, Guangli Yang, Gangning Wang, ChiChung Tai, Hong Sun
  • SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
    Publication number: 20160211320
    Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.
    Type: Application
    Filed: January 5, 2016
    Publication date: July 21, 2016
    Inventors: Li LIU, Xianyong PU, Guangli YANG, Gangning WANG, ChiChung TAI, Hong SUN