Abstract: Exemplary semiconductor processing chamber faceplates may include a body having a first surface and a second surface opposite the first surface. The body may define a plurality of apertures that extend through one or both of the first surface and the second surface. The faceplates may include a heater disposed within an interior of the body. The faceplates may include a first RF mesh disposed between the heater and the first surface. The faceplates may include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh may be coupled together and form a Faraday cage about the heater.

Abstract: Methods of manufacturing a semiconductor processing chamber showerheads may include forming a melted aluminum alloy composition, cooling the melted aluminum alloy composition at a rate of at least 103 K/sec to form solid aluminum alloy particles, and forming a core region of a showerhead from the solid aluminum alloy particles. The core region of the showerhead may include an inner core region and an outer core region that may be coupled together. The inner core region may define a plurality of apertures. The outer core region may define a channel that receives a heating element. The methods may include coating the core region with one of aluminum or aluminum oxide and joining a peripheral edge of the outer core region with an inner edge of a metallic annular liner. The metallic annular liner may have a lower thermal conductivity than the core region of the showerhead.

Abstract: Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Abstract: Exemplary methods of fabricating a faceplate for a processing chamber may include drilling a first portion of each of a plurality of apertures in a first surface of a faceplate. Each first portion may extend at least partially through a thickness of the faceplate. The methods may include detecting a center of each first portion using a laser drilling apparatus. The methods may include drilling a diffuser portion in each of the plurality of apertures using the laser drilling apparatus. Each diffuser portion is centered with respect to a respective one of the first portions.

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies used in semiconductor device manufacturing. In one embodiment, a substrate support includes a ceramic body having at least one aperture formed therein defined by a sidewall. A plurality of recesses extend into the sidewall, a rod member is disposed in the at least one aperture, and an eyelet member is circumferentially disposed about the rod member. The eyelet member has a plurality of protrusions extending outwardly therefrom, each disposed in a corresponding recess of the plurality of recesses. A first portion of each protrusion is in contact with a sidewall of the respective recess of the ceramic body and a second portion of each protrusion is separated by a gap from the sidewall of the respective recess of the ceramic body. A first portion of a brazing material is disposed between an upper surface of the at least one aperture and an end of the rod member.

Abstract: Aspects generally relate to substrate support apparatus and systems having elevated surfaces for heat transfer between the elevated surfaces and a substrate, and the methods of using the same. In one aspect, the elevated surfaces are disposed between a recessed surface and a plurality of support surfaces of a plurality of support protrusions that extend from the recessed surface. In one aspect, the elevated surfaces are disposed between a base surface and a plurality of support surfaces of a plurality of support protrusions that extend from the base surface. During a substrate processing operation, heat is transferred to the substrate through a plurality of cavities disposed between the elevated surfaces and a backside surface of the substrate.

Abstract: Exemplary semiconductor processing chamber showerheads include an inner core region. The inner core region may define a plurality of apertures. The showerheads may include an outer core region disposed about an outer periphery of the inner core region. The outer core region may define an annular channel. The showerheads may include a heating element disposed within the annular channel. The showerheads may include an annular liner disposed about an outer periphery of the outer core region. The inner core region and the outer core region may include an aluminum alloy. The annular liner may have a lower thermal conductivity than the aluminum alloy.

Abstract: Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assembly may include a ceramic material characterized by a grain size of less than or about 5 ?m.

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies used in semiconductor device manufacturing. In one embodiment, a substrate support includes a ceramic body having at least one aperture formed therein defined by a sidewall. A plurality of recesses extend into the sidewall, a rod member is disposed in the at least one aperture, and an eyelet member is circumferentially disposed about the rod member. The eyelet member has a plurality of protrusions extending outwardly therefrom, each disposed in a corresponding recess of the plurality of recesses. A first portion of each protrusion is in contact with a sidewall of the respective recess of the ceramic body and a second portion of each protrusion is separated by a gap from the sidewall of the respective recess of the ceramic body. A first portion of a brazing material is disposed between an upper surface of the at least one aperture and an end of the rod member.

Abstract: An enhanced anodization method includes forming a porous anodization layer comprising columns of anodization layer material with pores between adjacent columns. The method further includes sealing the porous layer by forming a sealing layer at a top of the porous layer. The sealing layer may be formed by using a hybrid sealing process that combines, in any order, two or more of de-ionized (DI) water seal, Ni sealing, and, PTFE sealing. Alternatively, the sealing layer is formed by conformally coating the columns in the porous layer with one or more layers of a coating material. Further, the coating material may be surface-fluorinated to improve plasma resistance.

Abstract: A heated support assembly is disclosed which includes a body comprising aluminum nitride doped with magnesium oxide having a volume resistivity of about 1×1010 ?-cm at about 600 degrees Celsius, an electrode embedded in the body, and a heater mesh embedded in the body.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material.

Abstract: A drive roller for use in a semiconductor substrate cleaning system is provided. In one embodiment, a drive roller includes an outer ring having a disk-shaped body, wherein the disk-shaped body has an inner cylindrical, an upper wall, and an outer cylindrical wall defining a cavity within the disk-shaped body. An inner ring is disposed within the cavity. A groove is formed along an outer side of the inner ring. The groove faces an inner surface of the outer cylindrical wall of the outer ring.

Abstract: Embodiments of the present invention generally relate to an apparatus and methods for rinsing and drying substrates. One embodiment provides an end effector comprising a body having a contact tip for contacting an edge area of a substrate, wherein the end effector is configured to support the substrate while the substrate is in a rinsing bath and while the substrate is being dried from the rinsing bath, and the contact tip comprises a hydrophilic material.