Patents by Inventor Chie Honda

Chie Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8193456
    Abstract: An electrical testing substrate unit includes a multi-layer ceramic substrate formed of mullite and a borosilicate glass as predominant ceramic components. In the multi-layer ceramic substrate, the borosilicate glass contains an alkali metal oxide in an amount of 0.5 to 1.5 mass %. The multi-layer ceramic substrate has a mean coefficient of linear thermal expansion having a value of 3.0 to 4.0 ppm/° C. between ?50° C. and 150° C. A thermal expansion coefficient, ?1, of the multi-layer ceramic substrate as determined at a particular temperature and a thermal expansion coefficient, ?2, of a to-be-tested silicon wafer as determined at the same temperature silicon satisfy a relation: 0 ppm/° C.<?1??2?2.5 ppm/° C. through the temperature range of ?50° C. to 150° C. Electrodes are formed on a surface of the multi-layer ceramic substrate.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: June 5, 2012
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroyuki Takahashi, Chie Honda, Tatsuya Kato, Tomohide Yamada, Shigeru Taga
  • Publication number: 20090321114
    Abstract: An electrical testing substrate unit includes a multi-layer ceramic substrate formed of mullite and a borosilicate glass as predominant ceramic components. In the multi-layer ceramic substrate, the borosilicate glass contains an alkali metal oxide in an amount of 0.5 to 1.5 mass %. The multi-layer ceramic substrate has a mean coefficient of linear thermal expansion having a value of 3.0 to 4.0 ppm/° C. between ?50° C. and 150° C. A thermal expansion coefficient, ?1, of the multi-layer ceramic substrate as determined at a particular temperature and a thermal expansion coefficient, ?2, of a to-be-tested silicon wafer as determined at the same temperature silicon satisfy a relation: 0 ppm/° C.<?1??2?2.5 ppm/° C. through the temperature range of ?50° C. to 150° C. Electrodes are formed on a surface of the multi-layer ceramic substrate.
    Type: Application
    Filed: June 29, 2009
    Publication date: December 31, 2009
    Inventors: Hiroyuki Takahashi, Chie Honda, Tatsuya Kato, Tomohide Yamada, Shigeru Taga