Patents by Inventor Chie Kato
Chie Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230085803Abstract: An objective of the present invention is to provide non-human animal models of cancer pathology, which mimic the hierarchical organization, cancer progression process, or biological property of human cancer tissues, and uses thereof. To achieve the objective described above, first, the present inventors transplanted cells of NOG-established cancer lines into NOG mice and morphologically observed the resulting tissue organization. As a result, the non-human animal models were demonstrated to exhibit pathologies (the hierarchical organization, cancer progression process, or biological properties of the cancer cells) similar to that of human cancer. Specifically, the present inventors succeeded in preparing non-human animal models exhibiting pathologies more similar to a human cancer, and cell culture systems using NOG-established cancer cell lines where the in vitro cell morphology is more similar to that of human cancer.Type: ApplicationFiled: November 22, 2022Publication date: March 23, 2023Applicant: CHUGAI SEIYAKU KABUSHIKI KAISHAInventors: Masami Suzuki, Koichi Matsubara, Atsuhiko Kato, Chie Kato, Shinta Kobayashi, Yu Jau Chen, Masaki Yamazaki
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Patent number: 11536713Abstract: An objective of the present invention is to provide non-human animal models of cancer pathology, which mimic the hierarchical organization, cancer progression process, or biological property of human cancer tissues, and uses thereof. To achieve the objective described above, first, the present inventors transplanted cells of NOG-established cancer lines into NOG mice and morphologically observed the resulting tissue organization. As a result, the non-human animal models were demonstrated to exhibit pathologies (the hierarchical organization, cancer progression process, or biological properties of the cancer cells) similar to that of human cancer. Specifically, the present inventors succeeded in preparing non-human animal models exhibiting pathologies more similar to a human cancer, and cell culture systems using NOG-established cancer cell lines where the in vitro cell morphology is more similar to that of human cancer.Type: GrantFiled: December 24, 2010Date of Patent: December 27, 2022Assignee: Chugai Seiyaku Kabushiki KaishaInventors: Masami Suzuki, Koichi Matsubara, Atsuhiko Kato, Chie Kato, Shinta Kobayashi, Yu Jau Chen, Masaki Yamazaki
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Patent number: 11517920Abstract: A coating nozzle 10 contains an introduction passage 21, an expansion passage 22 and a slit passage 23. The introduction passage 21 introduces high viscosity paint P and the slit passage 23 discharges it. The expansion passage 22 communicating with the introduction passage 21 has a wider space than the introduction passage 21 and substantially sectored-trapezoidal shape. The slit passage 23 is a slit opening communicating with the bottom of the expansion passage 22. The slit passage 23 includes a slit inlet port 23b on the bottom of the expansion passage 22 and a slit outlet port 23a with an arc shape on the other side of the inlet port 23b. This slit passage 23 has Lt/R×100=70-130% wherein the curvature radius of the arc of the outlet port 23a is R and the chord length Lt of the arc of the outlet port 23a is Lt.Type: GrantFiled: June 21, 2019Date of Patent: December 6, 2022Assignee: AISIN KAKO KABUSHIKI KAISHAInventors: Chie Kato, Tomoaki Katsuno
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Publication number: 20190388908Abstract: A coating nozzle 10 contains an introduction passage 21, an expansion passage 22 and a slit passage 23. The introduction passage 21 introduces high viscosity paint P and the slit passage 23 discharges it. The expansion passage 22 communicating with the introduction passage 21 has a wider space than the introduction passage 21 and substantially sectored-trapezoidal shape. The slit passage 23 is a slit opening communicating with the bottom of the expansion passage 22. The slit passage 23 includes a slit inlet port 23b on the bottom of the expansion passage 22 and a slit outlet port 23a with an arc shape on the other side of the inlet port 23b. This slit passage 23 has Lt/R×100=70-130% wherein the curvature radius of the arc of the outlet port 23a is R and the chord length Lt of the arc of the outlet port 23a is Lt.Type: ApplicationFiled: June 21, 2019Publication date: December 26, 2019Applicant: AISIN KAKO KABUHSIKI KAISHAInventors: Chie KATO, Tomoaki Katsuno
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Patent number: 9345250Abstract: The present invention provides a method for preparing a solubilized composition containing an oil-soluble substance having both acid and heat resistance, including: the step of dissolving an oil-soluble substance and two or three emulsifiers selected from (1) an emulsifier E1 comprising an ester of a fatty acid having an HLB of not less than 10 and not more than 14 carbon atoms with a polyglycerol having a polymerization degree of not less than 3, (2) an emulsifier E2 comprising an ester of a fatty acid having an HLB of not less than 10 and not more than 14 carbon atoms with sucrose, or (3) an emulsifier E3 comprising lecithin in which phosphatidylcholine accounts for not less than 50% and/or lysolecithin in which lysophosphatidylcholine accounts for not less than 50% of a phospholipid content in (a) ethanol or (b) a mixed solvent of ethanol with at least one selected from the group consisting of acetone, hexane, and ethyl acetate to prepare a transparent solution; and the step of distilling the solvent ofType: GrantFiled: September 18, 2007Date of Patent: May 24, 2016Assignee: TSUJI OIL MILL CO., LTD.Inventors: Akihito Hayashi, Chie Kato, Namiko Takahashi, Nobutoshi Hamaguchi, Hen-Sik Koh
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Patent number: 8789651Abstract: To absorb a noise produced by an external force that generates an audio frequency even if it is applied thereto, and to make it hard to become a noise source to a surrounding area. It includes a surface layer 20 having microscopic pores 21 formed on a surface 20A, communicating passages 24 communicating with the microscopic pores 21 and a porous layer 10 having sound pores 14 that are formed at an inner part deeper than the surface layer 20 having the microscopic pores 21 formed, communicate with the communicating passage 24 and that have a volume larger than volumes of the microscopic pore 21 formed on the surface 20A and the communicating passage 24. A sound absorption characteristic and/or a sound insulation characteristic is provided by the microscopic pores 21 of the surface 20A, the communicating passages 24 of the porous layer 10, and the sound pores 14 of the porous layer 10.Type: GrantFiled: May 24, 2011Date of Patent: July 29, 2014Assignee: Aisin Kako Kabushiki KaishaInventors: Junichi Kawai, Satoshi Mihara, Chie Kato
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Publication number: 20130118831Abstract: To absorb a noise produced by an external force that generates an audio frequency even if it is applied thereto, and to make it hard to become a noise source to a surrounding area. It includes a surface layer 20 having microscopic pores 21 formed on a surface 20A, communicating passages 24 communicating with the microscopic pores 21 and a porous layer 10 having sound pores 14 that are formed at an inner part deeper than the surface layer 20 having the microscopic pores 21 formed, communicate with the communicating passage 24 and that have a volume larger than volumes of the microscopic pore 21 formed on the surface 20A and the communicating passage 24. A sound absorption characteristic and/or a sound insulation characteristic is provided by the microscopic pores 21 of the surface 20A, the communicating passages 24 of the porous layer 10, and the sound pores 14 of the porous layer 10.Type: ApplicationFiled: May 24, 2011Publication date: May 16, 2013Applicant: AISIN KAKO KABUSHIKI KAISHAInventors: Junichi Kawai, Satoshi Mihara, Chie Kato
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Patent number: 8383517Abstract: A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200° C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.Type: GrantFiled: January 31, 2008Date of Patent: February 26, 2013Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Chie Kato, Akitaka Shimizu, Hiroyuki Takahashi
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Publication number: 20130019327Abstract: An objective of the present invention is to provide non-human animal models of cancer pathology, which mimic the hierarchical organization, cancer progression process, or biological property of human cancer tissues, and uses thereof. To achieve the objective described above, first, the present inventors transplanted cells of NOG-established cancer lines into NOG mice and morphologically observed the resulting tissue organization. As a result, the non-human animal models were demonstrated to exhibit pathologies (the hierarchical organization, cancer progression process, or biological properties of the cancer cells) similar to that of human cancer. Specifically, the present inventors succeeded in preparing non-human animal models exhibiting pathologies more similar to a human cancer, and cell culture systems using NOG-established cancer cell lines where the in vitro cell morphology is more similar to that of human cancer.Type: ApplicationFiled: December 24, 2010Publication date: January 17, 2013Inventors: Masami Suzuki, Koichi Matsubara, Atsuhiko Kato, Chie Kato, Shinta Kobayashi, Yu Jau Chen, Masaki Yamazaki
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Patent number: 8034720Abstract: A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.Type: GrantFiled: January 15, 2008Date of Patent: October 11, 2011Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Chie Kato, Jun Yamawaku
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Patent number: 7811939Abstract: A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.Type: GrantFiled: March 26, 2007Date of Patent: October 12, 2010Assignee: Tokyo Electron LimitedInventors: Masato Kushibiki, Chie Kato, Akitaka Shimizu
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Publication number: 20080182421Abstract: A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200° C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.Type: ApplicationFiled: January 31, 2008Publication date: July 31, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi NISHIMURA, Chie Kato, Akitaka Shimizu, Hiroyuki Takahashi
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Publication number: 20080179292Abstract: A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.Type: ApplicationFiled: January 15, 2008Publication date: July 31, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Chie Kato, Jun Yamawaku
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Publication number: 20080070992Abstract: The present invention provides a method for preparing a solubilized composition containing an oil-soluble substance having both acid and heat resistance, including: the step of dissolving an oil-soluble substance and two or three emulsifiers selected from (1) an emulsifier E1 comprising an ester of a fatty acid having an HLB of not less than 10 and not more than 14 carbon atoms with a polyglycerol having a polymerization degree of not less than 3, (2) an emulsifier E2 comprising an ester of a fatty acid having an HLB of not less than 10 and not more than 14 carbon atoms with sucrose, or (3) an emulsifier E3 comprising lecithin in which phosphatidylcholine accounts for not less than 50% and/or lysolecithin in which lysophosphatidylcholine accounts for not less than 50% of a phospholipid content in (a) ethanol or (b) a mixed solvent of ethanol with at least one selected from the group consisting of acetone, hexane, and ethyl acetate to prepare a transparent solution; and the step of distilling the solvent off fType: ApplicationFiled: September 18, 2007Publication date: March 20, 2008Inventors: Akihito Hayashi, Chie Kato, Namiko Takahashi, Nobutoshi Hamaguchi, Hen-Sik Koh
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Publication number: 20070224828Abstract: A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.Type: ApplicationFiled: March 26, 2007Publication date: September 27, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Masato KUSHIBIKI, Chie Kato, Akitaka Shimizu