Abstract: A device includes a first transistor, a second transistor, and a dielectric structure. The first transistor is over a substrate and has a first gate structure. The second transistor is over the substrate and has a second gate structure. The dielectric structure is between the first gate structure and the second gate structure. The dielectric structure has a width increasing from a bottom position of the dielectric structure to a first position higher than the bottom position of the dielectric structure. A width of the first gate structure is less than the width of the dielectric structure at the first position.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active region to the second active region. A metal contact is over and connected to a gate in the STI region. The metal connect is formed in a first opening and the metal contact is formed in a second opening, where the first opening and the second opening are formed concurrently using a single mask. The semiconductor arrangement formed using a single mask is less expensive to fabricate and requires fewer etching operations than a semiconductor arrangement formed using multiple masks.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active region to the second active region. A metal contact is over and connected to a gate in the STI region. The metal connect is formed in a first opening and the metal contact is formed in a second opening, where the first opening and the second opening are formed concurrently using a single mask. The semiconductor arrangement formed using a single mask is less expensive to fabricate and requires fewer etching operations than a semiconductor arrangement formed using multiple masks.