Abstract: The present invention reveals a beacon-based Internet of Things system comprising: a plurality of IoT devices, a plurality of gateways, and a backend server. According to the design of the present invention, each of the IoT devices is connected to one of the gateways that periodically broadcasts a stronger beacon signal and the backend server is connected to each of the gateways through the Internet Protocol. Consequently, the status information of each of the IoT devices is transmitted between each of the IoT devices and the backend server. With the beacon-based IoT system of the present invention, a more efficient, faster and more power-saving IoT system can be established.

Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: A micro light-emitting diode display device includes a substrate, a first planarization layer, a first light-emitting element, and a second planarization layer. The first planarization layer is disposed on the substrate and has a first opening. The first opening has a first opening inner wall. The first light-emitting element is disposed on the substrate, in the first opening, and separated from the first opening inner wall. The second planarization layer is disposed on the substrate and between the first planarization layer and the first light-emitting element. The second planarization layer is in contact with the first light-emitting element.

Abstract: A carton with a detachable buffer plate set includes a bottom plate, two long side plates, an upper cover, two short side plates, two reinforcing side plates, and a detachable buffer plate set. The long side plates and the short side plates are connected to the bottom plate. The upper cover is connected to one of the long side plates. The two reinforcing side plates are connected to the two short side plates respectively. The detachable buffer plate set is detachably connected to one of the reinforcing side plates. Accordingly, by detaching the detachable buffer plate set for supporting and buffering, products of similar size or products with accessories of different sizes may use the same-sized cartons and paper-plastic boxes, so that extra die-cutting costs and storage costs are avoided.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability.

Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: A control method of a driving mechanism is provided, including: the driving mechanism provides a first electrical signal from a control assembly to the driving mechanism to move the movable portion into an initial position relative to the fixed portion, wherein the control assembly includes a control unit and a position sensing unit; the status signal of an inertia sensing unit is read; the control unit sends the status signal to the control unit to calculate a target position; the control unit provides a second electrical signal to the driving assembly according to the target position for driving the driving assembly; a position signal is sent from the position sensing unit to the control unit; the control unit provides a third electric signal to the driving assembly to drive the driving assembly according the position signal.

Abstract: A display driver circuit for controlling a display panel having a plurality of light-emission diode (LED) strings includes a plurality of current regulators and a control circuit. Each of the plurality of current regulators is configured to control one of the plurality of LED strings. The control circuit, coupled to the plurality of current regulators, is configured to generate a plurality of pulses in a plurality of pulse width modulation (PWM) signals and output each of the plurality of PWM signals to a respective current regulator among the plurality of current regulators. Wherein, the plurality of pulses are scrambled.

Abstract: A method for performing a data exchanging process to exchange data includes the following steps: establishing a data operating unit, transferring an encryption key to a first terminal, receiving first data encrypted according to the encryption key from the first terminal, combining first subset data of the first data and second subset data of second data encrypted according to the encryption key in the data operating unit to form result data wherein the first subset data and the second subset data respectively have a common identifier, delivering the result data to the first terminal and terminating the data operating unit. Besides, a non-transitory computer-readable medium and a system to perform the method are disclosed.

Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: Disclosed is a method for controlling an electrochemical pump, comprising: providing an electrochemical pump, and causing a control circuit of the electrochemical pump to generate a pulse signal to enable an electrochemical reaction on electrodes of the electrochemical pump, wherein the pulse signal has alternating on-periods and off-periods where the pulse signal is off, and wherein each on-period has a plurality of on-times where the pulse signal is on and a plurality of off-times where the pulse signal is off, the on- and off-times being alternatingly arranged.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.

Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.