Abstract: A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.

Abstract: A porous catalyst includes at least one noble nano-metal particle, an oxide for forming porous structures, and a carrier material for supporting the oxide and the at least one noble nano-metal particle. The porous catalyst shows a large electrochemical surface area and a highly conductive ability. Further, the noble nano-metal particles are separated on the oxides uniformly, and the oxide of the catalyst forms a porous structure to provide a large electrochemical surface area. The porous catalyst provides excellent proton/electron transfer ability and increases the reaction rate.

Abstract: A porous catalyst includes at least one noble nano-metal particle, an oxide for forming porous structures, and a carrier material for supporting the oxide and the at least one noble nano-metal particle. The porous catalyst shows a large electrochemical surface area and a highly conductive ability. Further, the noble nano-metal particles are separated on the oxides uniformly, and the oxide of the catalyst forms a porous structure to provide a large electrochemical surface area. The porous catalyst provides excellent proton/electron transfer ability and increases the reaction rate.