Abstract: A technique for preparing a TEM sample for imaging of a defect in a wafer section during the course of integrated circuit fabrication on semiconductor wafer substrates. The TEM sample preparation technique of the present invention includes cutting a first cross-section void in the wafer section to expose the defect, providing a substantially transparent material on the defect to protect the defect from cutting particles, depositing a cutting line on the wafer section adjacent to the first cross-section void, and cutting a second cross-section void along the cutting line to define a TEM sample having a selected thickness between the first and second cross-section voids and containing the defect.