Patents by Inventor Chieh-Hsin HSIEH

Chieh-Hsin HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240134279
    Abstract: A photoresist includes a solvent, a polymer and an additive. The polymer is dissolved in the solvent, and the additive is dispersed in the solvent. The additive includes a double bond or includes an epoxy group. The additive has a surface tension different from a surface tension of the polymer.
    Type: Application
    Filed: March 27, 2023
    Publication date: April 25, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
  • Publication number: 20240096623
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
    Type: Application
    Filed: March 17, 2023
    Publication date: March 21, 2024
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
  • Patent number: 11914301
    Abstract: A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chieh-Hsin Hsieh, Wei-Han Lai, Ching-Yu Chang
  • Publication number: 20230102166
    Abstract: A method of manufacturing a semiconductor device includes forming a protective layer over a substrate. The hydrophilicity of the protective layer is reduced. A resist layer is formed over the protective layer, and the resist layer is patterned.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 30, 2023
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
  • Publication number: 20230063073
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
  • Publication number: 20230036859
    Abstract: A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.
    Type: Application
    Filed: July 16, 2021
    Publication date: February 2, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG