Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A reaction apparatus includes an upper dome, a lower dome, an upper liner, a lower liner, and a preheat ring. The upper dome and the lower dome define a reaction chamber. The preheat ring is positioned within the reaction chamber for heating the process gas prior to contacting the semiconductor wafer. The preheating ring is attached to an inner circumference of the lower liner. The preheat ring includes an annular disk and an edge bar. The annular disk has an inner edge, an outer edge, a first side, and a second side opposite the first side. The inner edge and the outer edge define a radial distance therebetween. The edge bar positioned on the first side and extending from the outer edge toward the inner edge an edge bar radial thickness. The radial distance is greater than the edge bar radial thickness.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly and a connecting assembly. The movable assembly is configured to connect an optical element having an optical axis, and the movable assembly is movable relative to the fixed assembly. The movable assembly is movably connected to the fixed assembly through the connecting assembly.

Abstract: A display device includes a timing controller, a transmission line, and a source driver coupled to the timing controller via the transmission line. The source driver monitors a data rate of a pixel packet in an active area of a frame, synchronizes a clock according to the data rate to generate a synchronized clock, and clocks data in the pixel packet using the synchronized clock.

Abstract: The present disclosure provides an outdoor electronic device including a shell, electronic assemblies, a rod body and a blower fan. The electronic assemblies are arranged in the shell. The rod body is of a hollow structure and includes a first end and a second end which are reversely arranged; and the first end is connected to the shell. At least one part of the blower fan is arranged on the rod body and includes an air inlet port and an air outlet port. The air inlet port extends to a position close to the electronic assemblies in the shell. The air outlet port is positioned in the rod body and is closer to the second end than the air inlet port.

Abstract: The present disclosure provides an outdoor electronic device including a shell, electronic assemblies, a rod body and a blower fan. The electronic assemblies are arranged in the shell. The rod body is of a hollow structure and includes a first end and a second end which are reversely arranged; and the first end is connected to the shell. At least one part of the blower fan is arranged on the rod body and includes an air inlet port and an air outlet port. The air inlet port extends to a position close to the electronic assemblies in the shell. The air outlet port is positioned in the rod body and is closer to the second end than the air inlet port.

Abstract: Disclosed are techniques for identity verification. In one aspect, the method includes determining whether a user account has the identity data; obtaining from a blockchain the hash value of the identity data signed with the private key if it is determined that the user account has the identity data; using the public key to verify the hash value of the identity data signed with the private key to obtain a decrypted hash value of the identity data; and comparing the decrypted hash value of the identity data with the hash value of the identity data stored in the database to generate an identity verification result.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of transmitting signals in a display device includes receiving a first data signal at a first data rate in a first time interval, and receiving a second data signal at a second data rate in a second time interval. The second data signal is generated at the second data rate, the second data rate is different from the first data rate, and the second time interval is non-overlapping with the first time interval.

Abstract: The embodiments of the present disclosure provide a signal transmission method and apparatus for a display device, and a display device. The method includes: adjusting a data rate for signal transmission within a blanking time; and performing signal transmission within an active time by using the data rate adjusted within the blanking time; wherein a signal transmission period of the display device includes the blanking time and the active time. Through the method of the present disclosure, the range of data rate used for signal transmission could be significantly expanded, more abundant data rate transmission requirements could be met, Electro Magnetic Interference during signal transmission could be reduced, and the quality of pictures displayed on the display device could be guaranteed.

Abstract: A magnetic template with adjustable magnetic force is provided. The magnetic template is applied to a display device. The display device can be fixed on a plane by the magnetic template, wherein the magnetic template includes an assembly shell and an adjustment element. A magnetic element is arranged inside the assembly shell. The adjustment element is arranged in the assembly shell and is configured to adjust the magnetic force of the magnetic element relative to the plane or adjust the magnetic force of the magnetic element.

Abstract: A method of manufacturing a semiconductor wafer in a reaction apparatus includes channeling a process gas into a reaction chamber of the reaction apparatus, heating the semiconductor wafer with a high intensity lamp positioned below the reaction chamber, blocking radiant heat from the high intensity lamp from heating a center region of the semiconductor wafer with a cap positioned on a shaft within the reaction chamber, the cap including a tube and a disc attached to the tube, where the disc generates a uniform temperature distribution on the semiconductor wafer, and depositing a layer on the semiconductor wafer with the process gas, where the uniform temperature distribution forms a uniform thickness of the layer on the semiconductor wafer.

Abstract: A method of manufacturing a semiconductor wafer in a reaction apparatus comprising channeling a process gas into a reaction chamber through the process gas inlet and heating the process gas with the preheat ring having an edge bar. The method also includes adjusting at least one of a velocity and a direction of the process gas with the edge bar, and depositing a layer on the semiconductor wafer with the process gas, wherein the edge bar facilitates forming a uniform thickness of the layer on the semiconductor wafer.

Abstract: A magnetic template with adjustable magnetic force is provided. The magnetic template is applied to a display device. The display device can be fixed on a plane by the magnetic template, wherein the magnetic template includes an assembly shell and an adjustment element. A magnetic element is arranged inside the assembly shell. The adjustment element is arranged in the assembly shell and is configured to adjust the magnetic force of the magnetic element relative to the plane or adjust the magnetic force of the magnetic element.

Abstract: A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.