Abstract: A tactile feedback system is provided, including a fixed part, a movable part, and a driving assembly. The fixed part is affixed to an electronic device. The movable part can move relative to the fixed part. The driving assembly is configured to drive the movable part to move relative to the fixed part, thereby generating a tactile feedback force to a user.

Abstract: A semiconductor device with different gate structures and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a thermal oxide layer on top and side surfaces of the fin structure, forming a polysilicon structure on the thermal oxide layer, doping portions of the fin structure uncovered by the polysilicon structure to form doped fin portions, forming a nitride layer on the polysilicon structure and the thermal oxide layer, forming an oxide layer on the nitride layer, doping the nitride layer with halogen ions, forming a source/drain region in the fin structure and adjacent to the polysilicon structure, and replacing the polysilicon structure with a gate structure.

Abstract: A communications circuit includes a receiver (RX) frontend coupled to an RX deserializer and the RX frontend includes a decision feedback equalizer coupled directly between an output and an input of the RX frontend. The decision feedback equalizer may include a first inverter and a series combination of a first resistor and a first capacitor coupled in series with the first inverter.

Abstract: A method for manufacturing a semiconductor device includes: forming a channel including a semiconductor material; forming two intermediate conductive layers in contact with the channel and spaced apart from each other; and forming two conductive contacts respectively on the two intermediate conductive layers. Each of the intermediate conductive layers includes at least one stacking unit. The at least one stacking unit includes two first metal oxide layers spaced apart from each other and a second metal oxide layer disposed between the two first metal oxide layers and extending along a lengthwise line such that the two first metal oxide layers are opposite to each other relative to the lengthwise line. Each of the first metal oxide layers includes first metal atoms. The second metal oxide layer includes second metal atoms that are different from the first metal atoms.

Abstract: An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. A ferroelectric layer formed according to the present teaching may be chlorine-free. Structures adjacent the ferroelectric layer are also formed with chlorine-free precursors. The absence of chlorine in the adjacent structures prevents diffusion of chlorine into the ferroelectric layer and prevents the formation of chlorine complexes at interfaces with the ferroelectric layer. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). The absence of chlorine ameliorates time-dependent dielectric breakdown (TDDB) and Bias Temperature Instability (BTI).

Abstract: A semiconductor structure includes a base structure having a conductive feature therein, a transistor disposed above the base structure, a capacitor disposed on the transistor, and an interconnecting routing that interconnects the second electrode with the conductive feature. The transistor includes a gate electrode, a gate dielectric, a channel spaced apart from the gate electrode through the gate dielectric, and two contact structures connected to the channel and spaced apart from each other. Each of the two contact structures includes a main body, and a protection layer that includes a transition metal which is one of elements of groups 3 to 12 in periods 5 to 7, elements of lanthanide series, and elements of actinide series. The capacitor includes a first electrode connected to one of the two contact structures of the transistor, a second electrode, and a dielectric interposed between the first electrode and the second electrode.

Abstract: A light concentrator includes two light reflectors connected to each other with an angle on one end to form a widening wedge-shaped structure with an opening aperture on the opposite end. At least one of the light reflectors is an active mirror device that includes a substrate having a smooth reflective surface, and a plurality of light-emitting elements disposed on the smooth reflective surface. The light emitted by the light-emitting elements is reflected, amplified, and concentrated toward the opening aperture for pumping a crystal to generate laser radiation. The widening wedge-shaped structure of the light concentrator may be filled with luminescent materials to convert the light of a wavelength from the light-emitting elements into luminescence light of another wavelength for pumping a crystal to generate laser radiation.

Abstract: A laser pumping device includes a pump-light emitter, a dielectric tube and a laser gain material. The pump-light emitter is configured to emit a pump light and has a pump axis. The dielectric tube is hollow-shaped and includes an accommodation space, an entrance surface and a plurality of reflection surfaces. The pump-light emitter is disposed adjacent to the entrance surface. The laser gain material is installed in the accommodation space filled with cooling water. The dielectric tube is configured to receive the pump light into the entrance surface, guide the pump light along the pump axis surrounded by the reflection surfaces, and concentrate the pump light into the laser gain material. The cooling water has dual purposes, including guiding the pump light toward and removing the heat from the laser gain material.

Abstract: Provided is a method for treating a SARS-CoV2 3CLpro-related disease in a subject in need thereof by blocking dimerization of 3C-like main protease (3CLpro) of the SARS-CoV2, including administering to the subject a first agent which binds to a first binding site of a SARS-CoV2 3CLpro complex and a second agent which binds to a second binding site of the SARS-CoV2 3CLpro complex, wherein the first binding site and the second binding site are functionally different sites in the three-dimensional structure of the SARS-CoV2 3CLpro complex. Also provided is a pharmaceutical combination including the first agent and the second agent for suppressing SARS-CoV2, thereby alleviating COVID-19.

Abstract: A multiple-layer hydrogen barrier stack may be included between a non-volatile memory structure and conductive structures in an interconnect structure in a semiconductor device. The multiple-layer hydrogen barrier stack may minimize and/or prevent hydrogen diffusion into one or more layers of the non-volatile memory structure such as a metal-oxide channel of the non-volatile memory structure. The multiple-layer hydrogen barrier stack may include a hydrogen absorption layer and a hydrogen blocking layer on the hydrogen absorption layer. The hydrogen blocking layer blocks or resists diffusion of hydrogen through the conductive structures into the non-volatile memory structure. The hydrogen absorption layer may absorb any hydrogen atoms that might diffuse through the hydrogen blocking layer.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node, a network assistant information (NAI) message identifying a set of characteristics of a network connection. The UE may communicate with the network node using a communication configuration associated with the set of characteristics of the network connection. Numerous other aspects are described.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure, and an electrode structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The electrode structure includes electrodes that are respectively disposed on the first and second semiconductor layers opposite to the substrate. Each electrode has an upper surface that is opposite to the first and second semiconductor layers. The electrode structure also includes an insulating unit that is disposed in each electrode, and that is not exposed from the upper surface of the corresponding electrode.

Abstract: A power management system and a power management method for wireless power supply are provided. The power management system includes a first electric auxiliary vehicle, a second electric auxiliary vehicle, a management device and a wireless charging platform. When the first electric auxiliary vehicle is located within a wireless charging range of the wireless charging platform, the wireless charging platform generates a password and provides the password and a user identification code of the first electric auxiliary vehicle to the management device. The first electric auxiliary vehicle communicates with the management device according to the user identification code to receive the password from the management device and displays the password, and activates a wireless power supply function according to a verification operation of the password and the user identification code, thereby providing power to the second electric auxiliary vehicle by a wireless power supply manner.

Abstract: Provided is a hearing aid device that includes an earplug, a speaker, a handle, and at least one microphone. A structural profile of the earplug body is mirror symmetrical relative to a plane. The speaker is disposed in the earplug body. The handle extends out of the earplug body from a connection side of the earplug body, and a structural profile of the handle is mirror symmetrical relative to the plane. The microphone is disposed in one or both of the handle and the earplug body.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: A bicycle trainer includes a base having a base portion and a standing portion, a supporting frame rotationally pivoted on the standing portion of the base around an axle, a cassette module mounted on the supporting frame and having multiple sprockets, and a flywheel module mounted on the supporting frame. A height adjusting member includes the standing portion, the supporting frame and a fixing element. The fixing element is placed in or between the standing portion and the supporting frame for keeping the supporting frame at a predetermined angle with respect to the standing portion.

Abstract: An integrated chip including a semiconductor layer over a substrate. A pair of source/drains are arranged along the semiconductor layer. A first metal layer is over the substrate. A second metal layer is over the first metal layer. A ferroelectric layer is over the second metal layer. The first metal layer has a first crystal orientation and the second metal layer has a second crystal orientation different from the first crystal orientation.

Abstract: Some embodiments relate to an integrated device, including a substrate having a first side and a second side opposite the first side, the substrate being a first material; a first wire level on the first side of the substrate and having a first wire; a second wire level on the second side of the substrate and having a second wire; a through-substrate via (TSV) extending from the first wire to the second wire through the substrate; a shallow trench isolation (STI) region surrounding the TSV at the second side of the substrate; and a semiconductor region between the STI region and the TSV, the semiconductor region comprising the first material.

Abstract: A tissue scaffold is provided. The tissue scaffold includes a textile formed by interweaving a plurality of warp yarns and a plurality of weft yarns. The textile includes a first region and a second region, and the second region is adjacent to the first region. The plurality of warp yarns have different diameters in the first region and the second region. The textile has a plurality of pores, and the size of each of the plurality of pores is between 100 ?m and 800 ?m. A method of manufacturing the aforementioned tissue scaffold is also provided.

Abstract: A method for fabricating a semiconductor device includes forming a fin structure that includes a plurality of semiconductor channel layers alternatively spaced apart from one another with a plurality of semiconductor sacrificial layers. The method further includes forming a semiconductor cladding layer extending along sidewalls of the fin structure. The method further includes patterning the semiconductor cladding layer to have a top surface with a highest point and a lowest point by performing at least one sequential combination of a first etching process and a second etching process. A vertical difference between the highest point and the lowest point is less than 3 nanometers.