Abstract: A method is provided, including following operations: activating a first word line to couple a first bit line with a second bit line to form a first conductive loop through a first transistor having a first terminal coupled to the first bit line and a second transistor having a first terminal coupled to the second bit line, wherein second terminals of the first and second transistors are coupled together; activating a second word line to couple a third bit line with a fourth bit line to form a second conductive loop, wherein the first and second word lines are disposed below the first to fourth bit lines; and identifying that the first conductive loop, the second conductive loop, or the combinations thereof is short-circuited or open-circuited.

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC.

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC.

Abstract: A motor circuit with power-off braking function includes a driving unit, a coil unit, and a braking unit. The driving unit includes a plurality of switch arms connected in parallel, with each switch arm having a series contact. The coil unit includes a plurality of coils and a central contact. Each coil includes an end connected to the series contact of one of the switch arms. The other end of each coil is connected to the central contact. The braking unit includes a brake loop switch coupled between the central contact of the coil unit and an end of the switch arms. When power is cut off, a plurality of brake loops is formed to share the transient current during braking.

Abstract: A motor circuit with power-off braking function includes a driving unit, a coil unit, and a braking unit. The driving unit includes a plurality of switch arms connected in parallel, with each switch arm having a series contact. The coil unit includes a plurality of coils and a central contact. Each coil includes an end connected to the series contact of one of the switch arms. The other end of each coil is connected to the central contact. The braking unit includes a brake loop switch coupled between the central contact of the coil unit and an end of the switch arms. When power is cut off, a plurality of brake loops is formed to share the transient current during braking.