Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A substrate of an electronic device includes a first set of contact pads and a first set of contact pillars having a height greater than the first set of contact pads. Components are coupled to the first set of contact pads and the first set of contact pillars in traversing directions. The components coupled to the contact pillars are positioned above the components coupled to the first set of contact pads such that at least a first portion of a first side of the component coupled to the contact traces faces a first side of the components coupled to the contact pillars. Stacking passive components in this manner can allow for increased component density without increasing package size.

Abstract: A bumped solder pad and methods for adding bumps to a solder pad are provided. A substrate is provided having metal layer formed thereon and a solder pad formed from a portion of the metal layer. A surface treatment is applied to the solder pad. The surface treatment is patterned. The surface treatment is etched to produce at least one bump on the solder pad.

Abstract: A substrate of an electronic device includes a first set of contact pads and a first set of contact pillars having a height greater than the first set of contact pads. Components are coupled to the first set of contact pads and the first set of contact pillars in traversing directions. The components coupled to the contact pillars are positioned above the components coupled to the first set of contact pads such that at least a first portion of a first side of the component coupled to the contact traces faces a first side of the components coupled to the contact pillars. Stacking passive components in this manner can allow for increased component density without increasing package size.

Abstract: A bumped solder pad and methods for adding bumps to a solder pad are provided. A substrate is provided having metal layer formed thereon and a solder pad formed from a portion of the metal layer. A surface treatment is applied to the solder pad. The surface treatment is patterned. The surface treatment is etched to produce at least one bump on the solder pad.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.