Patents by Inventor Chieh-Kai Yang

Chieh-Kai Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240421227
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: August 26, 2024
    Publication date: December 19, 2024
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 12074217
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: August 27, 2024
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Publication number: 20210320206
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: March 19, 2021
    Publication date: October 14, 2021
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 11011633
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: May 18, 2021
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Publication number: 20200321467
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: January 9, 2020
    Publication date: October 8, 2020
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 10797172
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: October 6, 2020
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George Imthurn, Mark L. Burgener, Robert B. Welstand
  • Patent number: 10790390
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: September 29, 2020
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 10680590
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: June 9, 2020
    Assignee: pSemi Corporation
    Inventors: Jianhua Lu, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Patent number: 10629733
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 21, 2020
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Publication number: 20190296722
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Application
    Filed: March 29, 2019
    Publication date: September 26, 2019
    Inventors: Jianhua Lu, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Publication number: 20190237579
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: April 5, 2019
    Publication date: August 1, 2019
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 10277211
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: April 30, 2019
    Assignee: pSemi Corporation
    Inventors: Jianhua Lu, Peter Bacon, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Publication number: 20190088781
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: July 26, 2018
    Publication date: March 21, 2019
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 10224913
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: March 5, 2019
    Assignee: pSemi Corporation
    Inventors: Jianhua Lu, Peter Bacon, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Patent number: 10074746
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: September 11, 2018
    Assignee: pSemi Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Publication number: 20180061985
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 1, 2018
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Patent number: 9786781
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: October 10, 2017
    Assignee: Peregrine Semiconductor Corporation
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang
  • Publication number: 20170237418
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Application
    Filed: November 30, 2016
    Publication date: August 17, 2017
    Inventors: Jianhua Lu, Peter Bacon, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Publication number: 20170237417
    Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.
    Type: Application
    Filed: November 30, 2016
    Publication date: August 17, 2017
    Inventors: Jianhua Lu, Peter Bacon, Naveen Yanduru, Edward Nicholas Comfoltey, Michael Conry, Chieh-Kai Yang
  • Publication number: 20170162692
    Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
    Type: Application
    Filed: November 17, 2016
    Publication date: June 8, 2017
    Inventors: Christopher N. Brindle, Jie Deng, Alper Genc, Chieh-Kai Yang