Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A process for increasing the line width window in a semiconductor process, which is suitable to be used to increase the line width widow at the time of the exposure of an iso-line pattern under 0.13 &mgr;m. This process includes: first forming a positive photoresist layer on the base, then using the first photomask to conduct the first exposure step on the positive photoresist layer. The first photomask is designed to have at least one main line that is opaque. On each of the two sides of the main line, there is a scattering bar. The width of the two scattering bars is greater than ⅓ of the wavelength of the light source that is used, and less than the width of the main line. The second photomask is used to conduct the second exposure step on the positive photoresist layer. The second photomask is designed to have at least two iso-lines that are pervious to light, and each of the two iso-lines is located at one of the two positions corresponding to the two scattering bars of the first photomask design.

Abstract: A method of improving a photoresist profile. After a photoresist layer is developed, a hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. The photoresist layer is thus able to reflow, so that the profile can be modified. Or alternatively, the hard bake step can be replace by first performing a hard bake at a temperature higher than the glass transition temperature, followed by performing a flow bake at a temperature lower than the glass transition temperature.