Abstract: A micro light-emitting diode display device includes a substrate, a first planarization layer, a first light-emitting element, and a second planarization layer. The first planarization layer is disposed on the substrate and has a first opening. The first opening has a first opening inner wall. The first light-emitting element is disposed on the substrate, in the first opening, and separated from the first opening inner wall. The second planarization layer is disposed on the substrate and between the first planarization layer and the first light-emitting element. The second planarization layer is in contact with the first light-emitting element.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: The disclosure provides an electronic device, including a circuit board, multiple semiconductor components, a first light reflecting structure, and a second light reflecting structure. The circuit board includes a substrate, and the substrate may have a first surface and at least one side surface. The multiple semiconductor components are disposed on the first surface. The first light reflecting structure is disposed on the first surface. The second light reflecting structure is disposed on the first surface and the at least one side surface.

Abstract: An apparatus for power controlling in a transmitter for detecting the output power without using a power coupler includes a plurality of stage amplifiers, a plurality of matching circuits, at least one power detector, and a bias control circuit. The stage amplifiers receive an emission signal and amplify the power thereof. The matching circuits are connected between the stage amplifiers for matching with the stage amplifiers, respectively. The power detector detects the power of the stage amplifiers and generates detection signals, respectively. The bias control circuit receives the detection signals of the power detector, thereby generating a bias of each of the stage amplifiers in order to optimize the efficiency of each of the stage amplifiers according to the magnitude of the power of each of the stage amplifiers.

Abstract: A power controller for detecting the output power without using a power coupler is disclosed. The power controller includes a plurality of stage amplifiers, a plurality of matching circuits, at least one power detector, and a bias control circuit. The stage amplifiers receive emission signals and amplify the power thereof. The matching circuits are connected between the stage amplifiers for matching with the stage amplifiers, respectively. The power detector detects the power of the stage amplifiers and generates detection signals, respectively. The bias control circuit receives the detection signals of the power detector, thereby generating a bias of each of the stage amplifiers in order to optimize the efficiency of each of the stage amplifiers according to the magnitude of the power of each of the stage amplifiers.