Patents by Inventor Chieh-Ting LIN
Chieh-Ting LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11966077Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.Type: GrantFiled: July 8, 2019Date of Patent: April 23, 2024Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Chien-Lung Chen, Chieh-Ting Lin, Yu-Yi Hsu, Hui-Wen Chen, Bo-Jiun Chen, Shih-Tai Chuang
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Publication number: 20230215902Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: ApplicationFiled: March 15, 2023Publication date: July 6, 2023Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
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Patent number: 11637142Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: GrantFiled: July 25, 2019Date of Patent: April 25, 2023Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
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Patent number: 11271132Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: April 14, 2020Date of Patent: March 8, 2022Assignee: Artilux, Inc.Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
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Publication number: 20210271022Abstract: A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.Type: ApplicationFiled: July 8, 2019Publication date: September 2, 2021Inventors: Yun-Chung NA, Chien-Lung CHEN, Chieh-Ting LIN, Yu-Yi HSU, Hui-Wen CHEN, Bo-Jiun CHEN, Shih-Tai CHUANG
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Publication number: 20200313029Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: ApplicationFiled: April 14, 2020Publication date: October 1, 2020Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin, Yun-Chung Na, Hui-Wen Chen, Han-Din Liu
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Patent number: 10644187Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: GrantFiled: December 13, 2018Date of Patent: May 5, 2020Assignee: Artilux, Inc.Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin
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Publication number: 20190348463Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: ApplicationFiled: July 25, 2019Publication date: November 14, 2019Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
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Patent number: 10418407Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: GrantFiled: April 3, 2018Date of Patent: September 17, 2019Assignee: Artilux, Inc.Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
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Publication number: 20190140133Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.Type: ApplicationFiled: December 13, 2018Publication date: May 9, 2019Inventors: Chien-Yu Chen, Szu-Lin Cheng, Chieh-Ting Lin, Yu-Hsuan Liu, Ming-Jay Yang, Shu-Lu Chen, Tsung-Ting Wu, Chia-Peng Lin
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Publication number: 20180247968Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.Type: ApplicationFiled: April 3, 2018Publication date: August 30, 2018Inventors: Yun-Chung Na, Che-Fu Liang, Shu-Lu Chen, Szu-Lin Cheng, Han-Din Liu, Chien-Lung Chen, Yuan-Fu Lyu, Chieh-Ting Lin, Bo-Jiun Chen, Hui-Wen Chen, Shu-Wei Chu, Chung-Chih Lin, Kuan-Chen Chu
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Publication number: 20130048064Abstract: Mechanically stacked multijunction solar cells are provided. In one embodiment, a mechanically stacked, multijunction solar cell comprises: a first solar cell having a first bandgap; a second solar cell having a second bandgap; and a plurality of spaced apart metal pillars sandwiched between the first solar cell and the second solar cell.Type: ApplicationFiled: August 28, 2012Publication date: February 28, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: William Edwin McMAHON, James Scott WARD, Chieh-Ting LIN, Mark W. WANLASS