Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer.

Abstract: A heterogeneous integration detecting method and a heterogeneous integration detecting apparatus are provided. The heterogeneous integration detecting method includes the following. Under the condition of maintaining the same relative distance between an interference objective lens and a sample, the relative posture of the interference objective lens and the sample is continuously adjusted according to the change of an image of the sample in the field of view of the interference objective lens until a first optical axis of the interference objective lens is determined to be substantially perpendicular to the surface of the sample according to the image. The interference objective lens is replaced with an imaging objective lens and the geometric profile of at least one via of the sample is detected. A second optical axis of the imaging objective lens after replacement overlaps with the first optical axis of the interference objective lens before replacement.

Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer.

Abstract: The invention provides an optical trapping skirt for adjusting the diameter of a beam passing thereof by varying the aperture. The optical trapping skirt has a body of bell shape and an iris diaphragm of bell shape, wherein the iris diaphragm of bell shape is installed inside the body so as to construct a ring like cavity. The undesired portion of the beam, which is incident on the iris diaphragm, is trapped in the ring like cavity and cannot be escaped. The aperture of the iris diaphragm is adjustable, so the diameter of the beam passing the optical trapping skirt is also controllable.

Abstract: The invention provides an optical trapping skirt for adjusting the diameter of a beam passing thereof by varying the aperture. The optical trapping skirt has a body of bell shape and an iris diaphragm of bell shape, wherein the iris diaphragm of bell shape is installed inside the body so as to construct a ring like cavity. The undesired portion of the beam, which is incident on the iris diaphragm, is trapped in the ring like cavity and cannot be escaped. The aperture of the iris diaphragm is adjustable, so the diameter of the beam passing the optical trapping skirt is also controllable.