Patents by Inventor Chiemi Hashimoto
Chiemi Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450731Abstract: A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.Type: GrantFiled: January 21, 2021Date of Patent: September 20, 2022Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Chiemi Hashimoto, Kosuke Yayama, Hidekazu Tawara
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Patent number: 11394371Abstract: The polysilicon resistance has a large resistance variation rate after the end of the mold packaging process. In order to enable high-precision trimming, it is desired to realize a resistance which is hardly affected by stress and temperature fluctuation generated in a substrate by a mold packaging process. A resistance element is formed in a plurality of wiring layers, and has a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and a repeating pattern of an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the interlayer conductive layer is formed of a plurality of types of materials.Type: GrantFiled: August 7, 2019Date of Patent: July 19, 2022Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Chiemi Hashimoto, Kosuke Yayama, Tomokazu Matsuzaki
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Publication number: 20210257443Abstract: A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.Type: ApplicationFiled: January 21, 2021Publication date: August 19, 2021Inventors: Chiemi HASHIMOTO, Kosuke YAYAMA, Hidekazu TAWARA
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Patent number: 10958250Abstract: A polycrystalline silicon resistor is large in coefficient of fluctuation in resistance between before and after the completion of a package molding process. To enable highly accurate trimming, it is desired to implement a resistor that is hardly subjected to stress produced in a substrate during a package molding process. A resistance element is formed of a plurality of wiring layers and has a repetitive pattern of a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and an interlayer conductive layer coupling the first conductive layer and the second conductive layer together.Type: GrantFiled: June 8, 2018Date of Patent: March 23, 2021Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Chiemi Hashimoto, Kosuke Yayama, Katsumi Tsuneno, Tomokazu Matsuzaki
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Publication number: 20200076409Abstract: The polysilicon resistance has a large resistance variation rate after the end of the mold packaging process. In order to enable high-precision trimming, it is desired to realize a resistance which is hardly affected by stress and temperature fluctuation generated in a substrate by a mold packaging process. A resistance element is formed in a plurality of wiring layers, and has a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and a repeating pattern of an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the interlayer conductive layer is formed of a plurality of types of materials.Type: ApplicationFiled: August 7, 2019Publication date: March 5, 2020Inventors: Chiemi HASHIMOTO, Kosuke YAYAMA, Tomokazu MATSUZAKI
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Publication number: 20180375497Abstract: A polycrystalline silicon resistor is large in coefficient of fluctuation in resistance between before and after the completion of a package molding process. To enable highly accurate trimming, it is desired to implement a resistor that is hardly subjected to stress produced in a substrate during a package molding process. A resistance element is formed of a plurality of wiring layers and has a repetitive pattern of a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and an interlayer conductive layer coupling the first conductive layer and the second conductive layer together.Type: ApplicationFiled: June 8, 2018Publication date: December 27, 2018Inventors: Chiemi HASHIMOTO, Kosuke YAYAMA, Katsumi TSUNENO, Tomokazu MATSUZAKI
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Patent number: 8106478Abstract: A power source noise of a semiconductor device having a core cell configuring a logic circuit is reduced. Above the core cell configuring the logic circuit provided on a main surface of a semiconductor substrate are provided a first branch line for a first power source of the core cell, which is electrically connected to a first power source trunk line, and a second branch line for a second power source of the core cell, which is electrically connected to a second power source trunk line. The first and second branch lines are oppositely provided, thereby forming a capacitor between the first and second power sources.Type: GrantFiled: January 15, 2008Date of Patent: January 31, 2012Assignee: Renesas Electronics CorporationInventors: Chiemi Hashimoto, Toshio Yamada
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Publication number: 20080173914Abstract: A power source noise of a semiconductor device having a core cell configuring a logic circuit is reduced. Above the core cell configuring the logic circuit provided on a main surface of a semiconductor substrate are provided a first branch line for a first power source of the core cell, which is electrically connected to a first power source trunk line, and a second branch line for a second power source of the core cell, which is electrically connected to a second power source trunk line. The first and second branch lines are oppositely provided, thereby forming a capacitor between the first and second power sources.Type: ApplicationFiled: January 15, 2008Publication date: July 24, 2008Inventors: Chiemi HASHIMOTO, Toshio Yamada
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Publication number: 20040232464Abstract: Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number of manufacturing steps and that of photomasks. After forming a gate electrode of a MISFET which constitutes a memory cell in a memory array region on a semiconductor substrate, the substrate is subjected to thermal treatment (re-oxidation process). At this time, since bird's beak of the thick gate insulating film formed below the sidewall portion of the gate electrode penetrates into the center of the gate electrode, a gate insulating film thicker than the gate insulating film before the re-oxidation process is formed just below the center of the gate electrode.Type: ApplicationFiled: June 29, 2004Publication date: November 25, 2004Inventors: Chiemi Hashimoto, Yasuhiko Kawashima, Keizo Kawakita, Masahiro Moniwa, Hiroyasu Ishizuka, Akihiro Shimizu
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Patent number: 6777279Abstract: Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number of manufacturing steps and that of photomasks. After forming a gate electrode of a MISFET which constitutes a memory cell in a memory array region on a semiconductor substrate, the substrate is subjected to thermal treatment (re-oxidation process). At this time, since bird's beak of the thick gate insulating film formed below the sidewall portion of the gate electrode penetrates into the center of the gate electrode, a gate insulating film thicker than the gate insulating film before the re-oxidation process is formed just below the center of the gate electrode.Type: GrantFiled: April 14, 2003Date of Patent: August 17, 2004Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd., Elpida Memory, Inc.Inventors: Chiemi Hashimoto, Yasuhiko Kawashima, Keizo Kawakita, Masahiro Moniwa, Hiroyasu Ishizuka, Akihiro Shimizu
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Publication number: 20030197202Abstract: Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of realizing the two-level gate insulator process for the DRAM without increasing the number of manufacturing steps and that of photomasks. After forming a gate electrode of a MISFET which constitutes a memory cell in a memory array region on a semiconductor substrate, the substrate is subjected to thermal treatment (re-oxidation process). At this time, since bird's beak of the thick gate insulating film formed below the sidewall portion of the gate electrode penetrates into the center of the gate electrode, a gate insulating film thicker than the gate insulating film before the re-oxidation process is formed just below the center of the gate electrode.Type: ApplicationFiled: April 14, 2003Publication date: October 23, 2003Inventors: Chiemi Hashimoto, Yasuhiko Kawashima, Keizo Kawakita, Masahiro Moniwa, Hiroyasu Ishizuka, Akihiro Shimizu
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Patent number: 5880497Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.Type: GrantFiled: January 26, 1996Date of Patent: March 9, 1999Assignee: Hitachi, Ltd.Inventors: Shuji Ikeda, Koichi Imato, Kazuo Yoshizaki, Kohji Yamasaki, Soichiro Hashiba, Keiichi Yoshizumi, Yasuko Yoshida, Kousuke Okuyama, Mitsugu Oshima, Kazushi Tomita, Tsuyoshi Tabata, Kazushi Fukuda, Junichi Takano, Toshiaki Yamanaka, Chiemi Hashimoto, Motoko Kawashima, Fumiyuki Kanai, Takashi Hashimoto
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Patent number: 5508540Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.Type: GrantFiled: February 2, 1994Date of Patent: April 16, 1996Assignee: Hitachi, Ltd.Inventors: Shuji Ikeda, Koichi Imato, Kazuo Yoshizaki, Kohji Yamasaki, Soichiro Hashiba, Keiichi Yoshizumi, Yasuko Yoshida, Kousuke Okuyama, Mitsugu Oshima, Kazushi Tomita, Tsuyoshi Tabata, Kazushi Fukuda, Junichi Takano, Toshiaki Yamanaka, Chiemi Hashimoto, Motoko Kawashima, Fumiyuki Kanai, Takashi Hashimoto