Abstract: A silicon photonic integrated system in a switch includes a multi-wavelength laser module, a first multiplexer, an optical channel, and a light signal generating element. The multi-wavelength laser module is configured to emit n laser beams with different peak wavelengths, and n is an integer greater than 2. The first multiplexer is optically coupled to the multi-wavelength laser module and configured to receive the laser beams and combine them into a combined beam. The optical channel is configured to receive a combined beam. The light signal generating element receives the combined beam through the optical channel and modulates the combined beam to emit a plurality of light output signals.

Abstract: A silicon photonic integrated system in a switch includes a multi-wavelength laser module, a first multiplexer, an optical channel, and a light signal generating element. The multi-wavelength laser module is configured to emit n laser beams with different peak wavelengths, and n is an integer greater than 2. The first multiplexer is optically coupled to the multi-wavelength laser module and configured to receive the laser beams and combine them into a combined beam. The optical channel is configured to receive a combined beam. The light signal generating element receives the combined beam through the optical channel and modulates the combined beam to emit a plurality of light output signals.

Abstract: A light modulator includes a substrate, a first semiconductor structure, a second semiconductor structure and a dielectric structure. The substrate has a principal surface and a first direction substantially perpendicular to the principal surface. The first semiconductor structure has a first conductive type and disposed over the principal surface. The second semiconductor structure has a second conductive type and disposed over the principal surface, in which the second semiconductor structure is free from overlapping the first semiconductor structure in the first direction. The dielectric structure is disposed over the principal surface and extends upwards from the principal surface such that dielectric structure is interposed between the first semiconductor structure and the second semiconductor structure.

Abstract: A method for manufacturing an optoelectronic module is proposed. The method comprises the following steps: providing a top cover with a reflective surface. Then, a light-guiding structure is formed. A mounting device is provided. Next, an optoelectronic device is formed on the mounting device with a first precision. A control chip is formed on the mounting device with a second precision different from the first precision. The top cover combines with the mounting device, wherein the light-guiding structure is between the top cover and the mounting device, and the optoelectronic device faces the reflective surface.

Abstract: A method for manufacturing an optoelectronic module is proposed. The method comprises the following steps: providing a top cover with a reflective surface. Then, a light-guiding structure is formed. A mounting device is provided. Next, an optoelectronic device is formed on the mounting device with a first precision. A control chip is formed on the mounting device with a second precision different from the first precision. The top cover combines with the mounting device, wherein the light-guiding structure is between the top cover and the mounting device, and the optoelectronic device faces the reflective surface.

Abstract: A semiconductor device and a fabrication method thereof are provides. The semiconductor device comprises a semiconductor substrate having a cavity and a light-emitting diode chip disposed in the cavity. The cavity is filled with an encapsulating resin to cover the light-emitting diode chip. Two isolated metal lines are disposed on the encapsulating resin and electrically connected to the light-emitting diode chip. At least two isolated inner wiring layers are disposed in the cavity and electrically connected to the isolated metal lines. At least two isolated outer wiring layers are disposed on a bottom surface of the semiconductor substrate and electrically connected to the isolated inner wiring layers.