Patents by Inventor Chien-Chen Li

Chien-Chen Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12327782
    Abstract: A substrate for a semiconductor package includes an array of bonding pads on a first surface of the substrate, and a plurality of raised structures adjacent to at least some of the bonding pads on the first surface of the substrate. The raised structures may be configured to control the height of solder balls contacting the array of bonding pads when the package substrate is mounted onto a support substrate. The raised structures may compensate for a deformation of the package substrate so that the co-planarity of the solder balls may be improved, thereby providing an improved solder connection between the package substrate and the support substrate.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: June 10, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wen-Yi Lin, Kuang-Chun Lee, Chien-Chen Li, Chen-Shien Chen
  • Patent number: 12322716
    Abstract: Embodiments provide metal features which dissipate heat generated from a laser drilling process for exposing dummy pads through a dielectric layer. Because the dummy pads are coupled to the metal features, the metal features act as a heat dissipation feature to pull heat from the dummy pad. As a result, reduction in heat is achieved at the dummy pad during the laser drilling process.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: June 3, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Hung Chen, Cheng-Pu Chiu, Chien-Chen Li, Chien-Li Kuo, Ting-Ting Kuo, Li-Hsien Huang, Yao-Chun Chuang, Jun He
  • Publication number: 20250118690
    Abstract: A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.
    Type: Application
    Filed: October 6, 2023
    Publication date: April 10, 2025
    Inventors: Wen-Yi Lin, Kan-Ju Yang, Kai-Cheng Chen, Chien-Li Kuo, Chien-Chen Li
  • Patent number: 12183709
    Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.
    Type: Grant
    Filed: December 18, 2023
    Date of Patent: December 31, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Yao Yang, Ling-Wei Li, Yu-Jui Wu, Cheng-Lin Huang, Chien-Chen Li, Lieh-Chuan Chen, Che-Jung Chu, Kuo-Chio Liu
  • Publication number: 20240421115
    Abstract: An embodiment semiconductor package includes a package substrate, a first semiconductor die electrically and mechanically coupled to the package substrate, a second semiconductor die electrically and mechanically coupled to the package substrate, a non-conductive film formed between the first semiconductor die and the package substrate, and a capillary underfill material formed between the second semiconductor die and the package substrate. The non-conductive film may be formed in a first region over a surface of the package substrate and the capillary underfill material may be formed over a second region of the surface of the package substrate, such that the second region surrounds the first region in a plan view. The semiconductor package may further include a multi-die frame partially surrounding the first semiconductor die and the second semiconductor die such that a multi-die chip is formed that includes the first semiconductor die, the second semiconductor die, and the multi-die frame.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 19, 2024
    Inventors: Wen-Yi Lin, Kai-Cheng Chen, Chien-Li Kuo, Chien-Chen Li
  • Publication number: 20240379475
    Abstract: A package structure is provided. The package structure includes a substrate and a ground structure laterally surrounded by the substrate. The package structure also includes a chip-containing structure over the substrate and a protective lid attached to the substrate through a first adhesive element and a second adhesive element. The ground structure is electrically connected to the protective lid through the first adhesive element. The second adhesive element is closer to a corner edge of the substrate than the first adhesive element, and a portion of the second adhesive element is between the first adhesive element and the chip-containing structure.
    Type: Application
    Filed: July 24, 2024
    Publication date: November 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Yi LIN, Kuang-Chun LEE, Chien-Chen LI, Chen-Shien CHEN
  • Patent number: 12119276
    Abstract: A package structure is provided. The package structure includes a substrate and a chip-containing structure over the substrate. The package structure also includes a protective lid attached to the substrate through a first adhesive element and a second adhesive element. The first adhesive element has a first electrical resistivity, and the second adhesive element has a second electrical resistivity. The second electrical resistivity is greater than the first electrical resistivity. The second adhesive element is closer to a corner edge of the substrate than the first adhesive element, and a portion of the second adhesive element is between the first adhesive element and the chip-containing structure.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: October 15, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Yi Lin, Kuang-Chun Lee, Chien-Chen Li, Chen-Shien Chen
  • Publication number: 20240332212
    Abstract: A package structure includes a package substrate, a semiconductor die module on the package substrate, a ring structure on the package substrate adjacent to the semiconductor die module, and a hybrid adhesive having a first modulus and a second modulus less than the first modulus and attaching the ring structure to the package substrate.
    Type: Application
    Filed: March 28, 2023
    Publication date: October 3, 2024
    Inventors: Wen-Yi Lin, Yi-Che Chiang, Chien-Chen Li, Chien-Li Kuo, Kuo-Chio Liu
  • Publication number: 20240302410
    Abstract: A probe head structure is provided. The probe head structure includes a flexible substrate having a top surface and a bottom surface. The probe head structure includes a first probe pillar passing through the flexible substrate. The probe head structure includes a redistribution structure on the top surface of the flexible substrate and the first probe pillar. The probe head structure includes a wiring substrate over the redistribution structure. The probe head structure includes a first conductive bump connected between the wiring substrate and the redistribution structure.
    Type: Application
    Filed: May 21, 2024
    Publication date: September 12, 2024
    Inventors: Wen-Yi LIN, Hao CHEN, Chuan-Hsiang SUN, Mill-Jer WANG, Chien-Chen LI, Chen-Shien CHEN
  • Publication number: 20240297138
    Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first substrate and through vias formed through the first substrate. The package further includes redistribution layers formed over the first substrate and connected to the through vias and a first pillar layer formed over the redistribution layers. The package further includes a first barrier layer formed over the first pillar layer and a first cap layer formed over the first barrier layer. The package further includes an underfill layer formed over the redistribution layers and surrounding the first pillar layer, the first barrier layer, and the first cap layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first sidewall surface of the first pillar layer and a second sidewall surface of the first cap layer.
    Type: Application
    Filed: May 13, 2024
    Publication date: September 5, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hung CHEN, Yu-Nu HSU, Chun-Chen LIU, Heng-Chi HUANG, Chien-Chen LI, Shih-Yen CHEN, Cheng-Nan HSIEH, Kuo-Chio LIU, Chen-Shien CHEN, Chin-Yu KU, Te-Hsun PANG, Yuan-Feng WU, Sen-Chi CHIANG
  • Publication number: 20240290683
    Abstract: An embodiment semiconductor package structure may include a package substrate, a semiconductor die coupled to the package substrate, and a package lid attached to the package substrate and covering the semiconductor die. The package lid may include a top portion having a spatially varying thermal conductivity that is greater in a first region than in a second region. The first region may include a multi-layer structure including a metal/diamond composite material supported by a copper layer. The metal/diamond composite material may include a silver/diamond, copper/diamond, or aluminum/diamond material and may have a thermal conductivity that is within a range from 600 W/m·K to 900 W/m·K and a coefficient of thermal expansion that is in a second range from 5 ppm/° C. to 10 ppm/° C. The package lid may have an effective coefficient of thermal expansion that is in a range from 14.5 ppm/° C. to 17 ppm/° C.
    Type: Application
    Filed: February 27, 2023
    Publication date: August 29, 2024
    Inventors: Wen-Yi LIN, Kuang-Chun LEE, Chien-Chen LI, Chien-Li KUO, Kuo-Chio LIU
  • Patent number: 12019097
    Abstract: A probe head structure is provided. The probe head structure includes a flexible substrate having a top surface and a bottom surface. The probe head structure includes a first probe pillar passing through the flexible substrate. The first probe pillar has a first protruding portion protruding from the bottom surface. The probe head structure includes a redistribution structure on the top surface of the flexible substrate and the first probe pillar. The redistribution structure is in direct contact with the flexible substrate and the first probe pillar. The redistribution structure includes a dielectric structure and a wiring structure in the dielectric structure. The wiring structure is electrically connected to the first probe pillar. The probe head structure includes a wiring substrate over the redistribution structure. The probe head structure includes a first conductive bump connected between the wiring substrate and the redistribution structure.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: June 25, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Yi Lin, Hao Chen, Chuan-Hsiang Sun, Mill-Jer Wang, Chien-Chen Li, Chen-Shien Chen
  • Patent number: 11984419
    Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
  • Publication number: 20240120313
    Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
  • Publication number: 20240096827
    Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Inventors: Chen-Shien Chen, Ting-Li Yang, Po-Hao Tsai, Chien-Chen Li, Ming-Da Cheng
  • Publication number: 20240071950
    Abstract: Integrated circuit packages and methods of forming the same are discussed. In an embodiment, a device includes: a package substrate; a semiconductor device attached to the package substrate; an underfill between the semiconductor device and the package substrate; and a package stiffener attached to the package substrate, the package stiffener includes: a main body extending around the semiconductor device and the underfill in a top-down view, the main body having a first coefficient of thermal expansion; and pillars in the main body, each of the pillars extending from a top surface of the main body to a bottom surface of the main body, each of the pillars physically contacting the main body, the pillars having a second coefficient of thermal expansion, the second coefficient of thermal expansion being less than the first coefficient of thermal expansion.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: Wen-Yi Lin, Kuang-Chun Lee, Chien-Chen Li, Chien-Li Kuo, Kuo-Chio Liu
  • Publication number: 20240071854
    Abstract: Some implementations described herein a provide a multi-die package and methods of formation. The multi-die package includes a dynamic random access memory integrated circuit die over a system-on-chip integrated circuit die, and a heat transfer component between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, which may correspond to a dome-shaped structure, may be on a surface of the system-on-chip integrated circuit die and enveloped by an underfill material between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, in combination with the underfill material, may be a portion of a thermal circuit having one or more thermal conductivity properties to quickly spread and transfer heat within the multi-die package so that a temperature of the system-on-chip integrated circuit die satisfies a threshold.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 29, 2024
    Inventors: Wen-Yi LIN, Kuang-Chun LEE, Chien-Chen LI, Chien-Li KUO, Kuo-Chio LIU
  • Patent number: 11862588
    Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Shien Chen, Ting-Li Yang, Po-Hao Tsai, Chien-Chen Li, Ming-Da Cheng
  • Publication number: 20230411307
    Abstract: Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes a large package component, such as a CoWoS, adhered to a large package substrate, such as a printed circuit board, an underfill material disposed between the large package component and the large package substrate, and a stress-release structure with high elongation values formed from photolithography encapsulated by the underfill material. The stress-release structure helping to reduce stress in the underfill material to reduce the risk of underfill cracking caused by the difference in coefficients of thermal expansion between the large package component and the large package substrate.
    Type: Application
    Filed: June 15, 2022
    Publication date: December 21, 2023
    Inventors: Wen-Yi Lin, Kuang-Chun Lee, Chien-Chen Li, Chien-Li Kuo, Kuo-Chio Liu
  • Patent number: 11848302
    Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: December 19, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Yao Yang, Ling-Wei Li, Yu-Jui Wu, Cheng-Lin Huang, Chien-Chen Li, Lieh-Chuan Chen, Che-Jung Chu, Kuo-Chio Liu