Patents by Inventor Chien-Chen Yang

Chien-Chen Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12000455
    Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi Chen Ho, Chih Ping Liao, Chien Ting Lin, Jie-Ying Yang, Wei-Ming Wang, Ker-Hsun Liao, Chi-Hsun Lin
  • Publication number: 20240120313
    Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
  • Publication number: 20240088042
    Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 14, 2024
    Inventors: SHU-WEI LI, HAN-TANG HUNG, YU-CHEN CHAN, CHIEN-HSIN HO, SHIN-YI YANG, MING-HAN LEE, SHAU-LIN SHUE
  • Patent number: 11827499
    Abstract: The present invention provides a double parallelogram vertical lifting device comprising a linkage mechanism and a pushing device. The linkage mechanism comprises a first shaft seat, a second shaft seat, a third shaft seat, an upper support unit movably coupled to the first shaft seat and the second shaft seat on both ends, and a lower support unit movably coupled to the second shaft seat and the third shaft seat on both ends. The upper support unit is provided with a first gear, and the lower support unit is provided with a second gear that meshes with the first gear. The pushing device has one end set on the upper support unit and the other end set on the lower support unit. The invention utilizes the interaction of the first gear and the second gear to generate a reaction force, which enables the lower support unit to cooperate with the upper support unit to move up and down synchronously, and achieves the effect of simple structure and large load capacity.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: November 28, 2023
    Assignee: QUEN LIN INSTRUMENTS CO., LTD.
    Inventor: Chien-Chen Yang
  • Publication number: 20220324685
    Abstract: The present invention provides a double parallelogram vertical lifting device comprising a linkage mechanism and a pushing device. The linkage mechanism comprises a first shaft seat, a second shaft seat, a third shaft seat, an upper support unit movably coupled to the first shaft seat and the second shaft seat on both ends, and a lower support unit movably coupled to the second shaft seat and the third shaft seat on both ends. The upper support unit is provided with a first gear, and the lower support unit is provided with a second gear that meshes with the first gear. The pushing device has one end set on the upper support unit and the other end set on the lower support unit. The invention utilizes the interaction of the first gear and the second gear to generate a reaction force, which enables the lower support unit to cooperate with the upper support unit to move up and down synchronously, and achieves the effect of simple structure and large load capacity.
    Type: Application
    Filed: April 7, 2021
    Publication date: October 13, 2022
    Inventor: Chien-Chen YANG
  • Publication number: 20200240386
    Abstract: The present invention teaches a tower for hydropower, comprising a main structure comprising an outflow tank at a top end and a collection tank at a bottom end of the main structure; a transmission device configured in the main structure; a plurality of water basins configured on the transmission device; and a generator device is coupled to the transmission device. Water is introduced into an outflow tank, and then into water basins so that the water basins are pulled downward by gravity so as to convert potential energy into kinetic energy that drives a transmission device and a generator device to produce electrical energy. Through this simple tower, a limited amount of water is used for electricity generation of enhanced efficiency, with fast initiation and low operating reserve.
    Type: Application
    Filed: January 29, 2019
    Publication date: July 30, 2020
    Inventor: Chien-Chen Yang