Abstract: Various solutions for low-power wake-up signal (LP-WUS) monitoring with respect to user equipment and network node in mobile communications are described. An apparatus may receive a configuration from a network node. The apparatus may comprise a main radio (MR) and a lower-power wake-up radio (LP-WUR). The apparatus may determine whether to activate or deactivate a low-power wake-up signal (LP-WUS) monitoring by the LP-WUR according to at least one pre-configured condition in the configuration. The apparatus may receive an LP-WUS from the network node via the LP-WUR in an event that the LP-WUS monitoring is activated.

Abstract: A method includes etching a semiconductor substrate to form a trench between a first semiconductor strip and a second semiconductor strip. The first semiconductor strip has a first width at about 5 nm below a top of the first semiconductor strip and a second width at about 60 nm below the top of the first semiconductor strip. The first width is smaller than about 5 nm, and the second width is smaller than about 14.5 nm. The trench is filled with dielectric materials to form an isolation region, which is recessed to have a depth. A top portion of the first semiconductor strip protrudes higher than the isolation region to form a protruding fin. The protruding fin has a height smaller than the depth. A gate stack is formed to extend on a sidewall and a top surface of the protruding fin.

Abstract: A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength m?o/2n, where m is an integer, ?o is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.

Abstract: A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength m?o/2n, where m is an integer, ?o is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.