Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: A solenoid valve includes a bobbin, a coil, a rod, and at least one ball. The bobbin has a through hole and a multiple-turning-point groove in the inner wall of the bobbin. The coil winds around the bobbin. The rod is disposed in the through hole and is capable of moving inward or outward along the through hole, and has a recess in the outer wall of the rod. Each ball is received in the groove and the recess at the same time.

Abstract: A solenoid valve comprises a bobbin, a coil, a valve rod, a slidable ring, and a rotatable ring. The bobbin has a through hole. The coil is wound around the bobbin. The valve rod is disposed in the through hole and is inwardly or outwardly movable along the through hole. The slidable ring is telescoped onto the valve rod and inwardly or outwardly movable with the valve rod. The rotatable ring is disposed inside the through hole and inside the slidable ring.

Abstract: A solenoid valve includes a bobbin, a coil, a rod, and at least one ball. The bobbin has a through hole and a multiple-turning-point groove in the inner wall of the bobbin. The coil winds around the bobbin. The rod is disposed in the through hole and is capable of moving inward or outward along the through hole, and has a recess in the outer wall of the rod. Each ball is received in the groove and the recess at the same time.

Abstract: A valve apparatus includes a body, a sleeve and a shaft. The sleeve is connected to the body by screwing. The shaft is telescoped into the sleeve. The body and the sleeve both have at least one locking portion corresponding to each other. The valve apparatus uses locking portions disposed at the junction of the body and the sleeve to lock their relative position, thereby improving the reliability of the connection.

Abstract: A three-dimensional capacitor structure has a first conductive layer, a second conductive layer disposed above the first conductive layer, and a plug layer disposed therebetween. The first conductive layer includes a plurality of grid units arranged in a matrix, where in odd rows of the matrix, a first conductive grid is located in each odd column, and a first circular hole is located in each even column. Additionally, a first conductive island is located within each first circular hole. The pattern of the second conductive grids, the second circular holes, and the second conductive island of the second conductive layer is mismatched with that of the first conductive layer. The plug layer has a plurality of plugs disposed in between each first conductive island and each second conductive grid, and in between each first conductive grid and each second conductive island.

Abstract: A three-dimensional capacitor structure has a first conductive layer, a second conductive layer disposed above the first conductive layer, and a plug layer disposed between the conductive layers. The first conductive layer includes first conductive closed-end frames, and first conductive islands disposed inside the first conductive closed-end frames. The second conductive layer includes second conductive closed-end frames, and second conductive islands disposed inside the second conductive closed-end frames. The second conductive closed-end frames line up with the first conductive islands, and the second conductive islands line up with the first conductive closed-end frames. The plug layer has plugs disposed in between each first conductive island and each second conductive closed-end frame, and in between each first conductive closed-end frame and each second conductive island.

Abstract: A three-dimensional capacitor structure has a first conductive layer, a second conductive layer disposed above the first conductive layer, and a plug layer disposed therebetween. The first conductive layer includes a plurality of grid units arranged in a matrix, where in odd rows of the matrix, a first conductive grid is located in each odd column, and a first circular hole is located in each even column. Additionally, a first conductive island is located within each first circular hole. The pattern of the second conductive grids, the second circular holes, and the second conductive island of the second conductive layer is mismatched with that of the first conductive layer. The plug layer has a plurality of plugs disposed in between each first conductive island and each second conductive grid, and in between each first conductive grid and each second conductive island.

Abstract: An ignition coil. The ignition coil includes a casing, a bobbin, and a core. The bobbin includes a body, a primary coil surrounding the body, a secondary coil surrounding the body, a plurality of first terminals embedded in the body, and two secondary coils embedded in the body. The bobbin is disposed inside the casing. The primary coil is connected to the second terminal, and the secondary coil is connected to the first terminal. Each first terminal is abutted by the body and the casing respectively so that each first terminal is maintained in a predetermined position on the body. The core is disposed inside the bobbin.

Abstract: A display for a vehicle includes a flat panel and an angle-adjusting mechanism which is connected to the flat panel for flexibly adjusting an angle of the flat panel. The angle-adjusting mechanism includes a first active element and a first driver. The first active element is connected to the flat panel, and the first driver is connected to the first active element so as to drive the first active element to adjust the angle of the flat panel. The first active element connected to a central region of the flat panel for providing a moving force onto the flat panel, and the first active element is moved forward to push the flat panel or moved backward to pull the flat panel.

Abstract: An ignition coil. The ignition coil includes a casing, a bobbin, and a core. The bobbin includes a body, a primary coil surrounding the body, a secondary coil surrounding the body, a plurality of first terminals embedded in the body, and two secondary coils embedded in the body. The bobbin is disposed inside the casing. The primary coil is connected to the second terminal, and the secondary coil is connected to the first terminal. Each first terminal is abutted by the body and the casing respectively so that each first terminal is maintained in a predetermined position on the body. The core is disposed inside the bobbin.

Abstract: An ignition coil is provided. The ignition coil comprises a casing, a plurality of pins and a bobbin. The pins are disposed inside the casing. The bobbin, having a plurality of first terminals corresponding to the pins respectively, is disposed inside the casing. Each of the first terminals is provided with a ring-shaped portion in contact with the corresponding pin. Hence, resin, filled in the ignition coil, is prevented from leaking out of the casing.

Abstract: An embedded transformer embedded in a board is disclosed. The embedded transformer includes a board, a first insulating sheet, a preformed coil, a second insulating sheet, a first core and a second core. Among these, the board includes a conductive pattern formed on an upper surface of the board. A part of said conductive pattern serves as a primary coil of the embedded transformer. The first insulating sheet is formed on the conductive pattern. The preformed coil is formed on the first insulating sheet. The second insulating sheet is formed on the preformed coil. The first core is formed on the second insulating sheet and partially embedded in the board. The second core formed on a lower surface of the board is partially embedded in the board so as to be couple to the first core.

Abstract: An apparatus and a method for monitoring the ion concentration in an etching chamber of a sputter etch process are described, wherein the DC bias of a pre-clean process for a sputter etch process is acquired. The parameters of the pre-clean process for the sputter etch process are then adjusted according to the value of the monitored DC bias. The DC bias thus varies within a certain range to provide a steady control of the ion concentration and to reduce the defects formed in the wafer.

Abstract: A bobbin for a transformer is provided. The bobbin comprises a body, a first partition wall, a second partition wall, at least one third partition wall, and two first pins. The first partition wall, having a first protrusion, is formed on the body. The body is divided into a primary side and a secondary side by the first partition wall. The second partition wall, having a second protrusion with a thinner section, is formed on the secondary side of the body. The third partition wall, having a third protrusion with a notch, is formed on the secondary side of the body so that the third partition wall is close to the second partition wall and away from the first partition wall. The first pins are disposed on the secondary side of the body in a substantially U-shape.

Abstract: The present invention proposes an application of controlling gas valves to reduce particles from the CVD process. First, the actions of opening and closing a gas valve are added to let particles possibly adhering on the gas valve fall during the idle period between the CVD processes of a wafer and the next wafer. Next, an inert gas is led in to purge the gas valve and the reaction chamber. Finally, a gas-extracting means is used to extract the gas out. The actions of opening and closing the gas valve only take a few seconds so that the time of the next wafer entering the reaction chamber to perform the CVD process will not be influenced. The present invention has the advantage of increasing the yield of wafer while the production is not influenced and the original fabrication equipments need not be changed.

Abstract: The present invention provides a low profile transformer including a bobbin and core structure. The bobbin further includes a primary coil, a secondary coil and a plurality of pins formed thereon. The core structure is coupled to the bobbin. In addition, the core structure includes an I-core and two U-cores coupled to each other. Alternatively, the I-core includes at least one recessed edge and the U-cores include at least one protrusive edge. The U-cores are coupled to the I-core by means of the recessed edge and the protrusive edge.

Abstract: The present invention proposes an application of controlling gas valves to reduce particles from the CVD process. First, the actions of opening and closing a gas valve are added to let particles possibly adhering on the gas valve fall during the idle period between the CVD processes of a wafer and the next wafer. Next, an inert gas is led in to purge the gas valve and the reaction chamber. Finally, a gas-extracting means is used to extract the gas out. The actions of opening and closing the gas valve only take a few seconds so that the time of the next wafer entering the reaction chamber to perform the CVD process will not be influenced. The present invention has the advantage of increasing the yield of wafer while the production is not influenced and the original fabrication equipments need not be changed.