Abstract: The present invention provides an configuration setting device of integrated circuit and the configuration setting method thereof, in which the configuration setting device comprises a signal receiving terminal, a voltage output unit coupled to the signal receiving terminal, and a detector coupled to the signal receiving terminal. The signal receiving terminal is used to receive the input signal at the outer of the integrated circuit, and the voltage output unit generated at the inner of the integrated circuit is used to output a voltage signal based on the enable signal, and the detector is used to detect a level at the signal receiving terminal to output a configuration signal; wherein, the signal level generated at the signal receiving terminal is determined by the input signal and the voltage signal.

Abstract: According to an embodiment of the disclosure, an organic light emitting device is provided, which includes: an inflexible tube comprising an external surface and an internal surface; a transparent conductive layer on the internal surface of the inflexible tube; an organic light emitting layer disposed in the inflexible tube and on the transparent conductive layer; and a conductive layer disposed in the inflexible tube and on the organic light emitting layer. According to an embodiment of the disclosure, a method for forming an organic light emitting device is also provided.

Abstract: A handheld device is provided, wherein the handheld device comprises a housing, a circuit board, a planar antenna and a switch. The housing comprising an outer surface is configured to define a receiving space. The circuit board is disposed in the receiving space. The planar antenna comprises a metal layer, wherein the metal layer comprising a first connecting point and a second connecting point is patterned on the outer surface. The switch comprising a first electrode and a second electrode is configured to control the electrical connection between the first connecting point and the second connecting point, wherein the first electrode and the second electrode are electrically connected between the first connecting point and the second connecting point. The planar antenna operates at a first central band when the switch is turned on, and operates at a second central band when the switch is turned off.

Abstract: A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process.

Abstract: In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength ?L. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength ?QWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength ?L. The QWI output window is characterized by a photoluminescent wavelength ?PL. The manufacturing process comprises a ?PL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength ?L and the photoluminescent wavelength ?PL of the QWI output window.

Abstract: An EDC generating circuit includes a memory unit, an EDC generating module, a header generator and an EDC correcting circuit. The EDC generating module, which is coupled to the memory unit, is used for generating a first EDC according to at least one main data, and for storing the first EDC to the memory unit. The header generator, which is coupled to the memory unit, is used for generating a header according to header information. The EDC correcting circuit, which is coupled to the memory unit, is used for reading the first EDC from the memory unit and for correcting the first EDC according to the header to generate a second EDC.

Abstract: An encoding circuit is disclosed, which has a memory unit, an EDC generating circuit, a scrambler, a header generator, an EDC correcting circuit, and an encoder. The EDC generating circuit generates a first EDC according to at least one main data. The scrambler generates a scrambled main data according to the main data. The header generator generates a header according to header information. The EDC correcting circuit, corrects the first EDC according to the header to generate a second EDC. The encoder encodes an optical data according to the second EDC and the scrambled main data.

Abstract: A method for monitoring a photolithography process includes providing a monitor mark having high sensitivity of the focus of the photolithography process, transferring the monitor mark together with the product patterns through the photolithography process onto a substrate, and measuring the deviation dimension of the monitor mark formed on the substrate to real-time monitor the focus of the photolithography process.

Abstract: A method of measuring a numerical aperture of an exposure machine is described. A control wafer having vernier marks thereon and an aberration mask having pinholes therein are provided, wherein each pinhole corresponds to a vernier mark in position. A lithography process using the exposure machine and the aberration mask is performed to the control wafer, so as to form over each vernier mark a photoresist pattern having the same shape of the illumination pattern of the light source of the exposure machine. The numerical aperture of the exposure machine is then derived from a graduation of the vernier mark corresponding to an outer edge of the photoresist pattern.

Abstract: The present invention discloses an adaptively de-blocking circuit and associated method. A mean is derived according to the neighboring pixels surrounding a central pixel of an image. A blending factor is determined according to a flatness of the image. An updated pixel value of the central pixel is determined by blending the original pixel value of the central pixel and the mean according to the blending factor. Finally, alternatively output the updated pixel value and the original pixel value of the central pixel in response to a block border signal.

Abstract: An encoding circuit comprising: a memory unit; an EDC generating circuit, a scrambler, a header generator, an EDC correcting circuit and an decoder. The EDC generating circuit is used for generating a first EDC according to at least one main data, and for storing the first EDC to the memory unit. The scrambler is used for generating a scrambled main data according to the main data, and for storing the scrambled main data to the memory unit. The header generator is used for generating a header according to header information. The EDC correcting circuit is used for reading the first EDC from the memory unit and for correcting the first EDC according to the header to generate a second EDC. The encoder is used for encoding optical data according to the second EDC and the scrambled main data.

Abstract: A linear-type microwave-excited plasma source mainly comprises a reacting chamber, a rectangular waveguide and a linear biased slot in between. A linear quartz plate with an o-ring embedded in the biased slot is required so as to keep the reaction chamber in low pressure condition. Plasma will be excited in the reacting chamber by microwave powers radiating from the biased slot. A linear-type movable dielectric material can be disposed in the waveguide to control the radiation intensity of microwave, such that the length of the linear-type plasma source is able be extended without increasing input microwave powers and thus large-area low-cost plasma-processing applications can be implemented.

Abstract: Disclosed herein are novel protoilludane norsesquiterpenoid ester compounds isolated from mycelium of Armillaria mellea that are useful for treating tumors or proliferative diseases such as breast cancers, lung cancers, colon cancers or leukemia.

Abstract: In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength ?L. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength ?QWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength ?L. The QWI output window is characterized by a photoluminescent wavelength ?PL. The manufacturing process comprises a ?PL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength ?L and the photoluminescent wavelength ?PL of the QWI output window.

Abstract: A manufacturing method and system using a plane-type film continuous evaporation source are disclosed, in which the manufacturing method comprises the steps of: providing a plane-type film continuous evaporation source, being a substrate having at least one evaporation material coated on a surface thereof while distributing the at least one evaporation material in a specific area of the substrate capable of covering all the plates to be processed by the evaporated evaporation material; arranging a heater inside the specific area to be used for enabling the at least one evaporation material to evaporate and thus spreading toward the processed plates. Thereby, the evaporated evaporation material can be controlled at the molecular/atomic level for enabling the same to form a film according to surface-nucleation, condensation and growth with superior evenness, nano-scale adjustability, specialized structure and function that can not be achieve by the films from conventional spray coating means.

Abstract: A protective circuitry (20) is connected between a power input port (11) and an electronic component (12) of an electronic device. The protective circuitry includes a field effect transistor (21) and a detection unit (25). The field effect transistor has a gate and a drain both electrically connected to an anode of the power input port, and a source electrically connected to a cathode of the power input port via the electronic component. The detection unit has two conductive pads spaced to each other. One pad is electrically connected to the gate and the other pad is electrically connected to the cathode of the power input port.

Abstract: A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to encapsulate the chip and the passive component, wherein the cutaway corner of the encapsulant is spaced apart from the slanted side of the opening by a predetermined distance. A singulation process is performed to cut the encapsulant to form a package with a chamfer. The package is embedded in a lid to form the semiconductor device, wherein a portion of the substrate located between the slanted side of the opening and the cutaway corner of the encapsulant is exposed from the encapsulant to form an exposed portion. The present invention also provides a carrier for the semiconductor device.

Abstract: A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to encapsulate the chip and the passive component, wherein the cutaway corner of the encapsulant is spaced apart from the slanted side of the opening by a predetermined distance. A singulation process is performed to cut the encapsulant to form a package with a chamfer. The package is embedded in a lid to form the semiconductor device, wherein a portion of the substrate located between the slanted side of the opening and the cutaway corner of the encapsulant is exposed from the encapsulant to form an exposed portion. The present invention also provides a carrier for the semiconductor device.

Abstract: A quantum dot dye-sensitized solar cell (QDDSSC) including an anode, a cathode, and an electrolyte between the anode and the cathode is provided. The anode includes a semiconductor electrode layer adsorbed with a dye, a plurality of quantum dots distributed within the semiconductor electrode layer, and a plurality of metal nanoparticles distributed within the semiconductor electrode layer. Because the absorption spectra of the quantum dots, the dye, and the semiconductor electrode layer cover the infrared (IR), visible, and ultraviolet (UV) regions of the solar spectrum, IR to UV light in the solar spectrum can be effectively absorbed, and accordingly the conversion efficiency of the solar cell can be improved. Moreover, the metal nanoparticles can increase the light utilization efficiency.

Abstract: The present invention provides a method of potentiating radiation therapy for treatment of a cancer or tumor comprising administrating to a subject in need thereof a therapeutically effective amount of a radiosensitizer in combination of a radiation therapy to a locus of the cancer or tumor, wherein the radiosensitizer is an extract of Schisandra chinensis (Turcz.) Baill, or the active ingredient isolated therefrom, particularly Schisandrin B.