Abstract: A method of forming a semiconductor device includes providing a precursor. The precursor includes a substrate; a gate stack over the substrate; a first dielectric layer over the gate stack; a gate spacer on sidewalls of the gate stack and on sidewalls of the first dielectric layer; and source and drain (S/D) contacts on opposing sides of the gate stack. The method further includes recessing the gate spacer to at least partially expose the sidewalls of the first dielectric layer but not to expose the sidewalls of the gate stack. The method further includes forming a spacer protection layer over the gate spacer, the first dielectric layer, and the S/D contacts.

Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a reference circuit that generates a first reference with a first non-zero temperature coefficient and a second reference with a second temperature coefficient having a different magnitude than the first non-zero temperature coefficient. A detector circuit on the integrated circuit, having temperature and process variation compensation, converts a difference between the first and second references into a digital signal indicating temperature on the integrated circuit.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.

Abstract: A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: A composite material structure, including an outer layer, an inner layer, and a middle layer, is provided. The outer layer includes a metallic material. The inner layer includes a fiber material and a resin material. The outer layer has a first thickness, the inner layer has a second thickness, and the first thickness is different from the second thickness. The middle layer includes an adhesive material and is disposed between the outer layer and the inner layer. Two opposite surfaces of the middle layer are respectively in direct contact with the outer layer and the inner layer. A manufacturing method of the composite material structure is also provided.

Abstract: A feed forward echo cancellation device includes a first impedance circuit, a second impedance circuit, and an echo cancellation current generator circuit. The first impedance circuit is configured to output a first current to a node in response to a transmission current. The second impedance circuit is configured to output a second current to a node in response to the transmission current. The echo cancellation current generator circuit is configured to drain an echo cancellation current from the node. The node is connected to an input terminal of a programmable gain amplifier circuit via a gain control circuit, and the gain control circuit is configured to set a gain of the programmable gain amplifier circuit.

Abstract: A crystal oscillator (XO) and a method for performing startup of the XO are provided. The XO includes a XO core circuit, an auxiliary oscillator and a frequency detection circuit, wherein the frequency detection circuit includes a resistive circuit. The frequency detection circuit generates a detection voltage according to a driving signal associated with an auxiliary signal generated by the auxiliary oscillator and a first impedance of the resistive circuit. During a first powered on phase, the auxiliary oscillator is calibrated by utilizing the XO core circuit as a reference after startup of the XO core circuit is completed, and the resistive circuit is calibrated according to the detection voltage. During a second powered on phase, a frequency of the driving signal is calibrated according to the detection voltage, and the driving signal is injected to the XO core circuit for accelerating the startup of the XO core circuit.

Abstract: Some implementations described herein provide an inductor device formed in a substrate of a semiconductor device including an integrated circuit device. The inductor device may use one or more conduction layers that are included in the substrate. Furthermore, the inductor device may be electrically coupled to the integrated circuit device. By forming the inductor device in the substrate of the semiconductor device, an electrical circuit including the inductor device and the integrated circuit device may be formed within a single semiconductor device.

Abstract: A portable electronic device including a first body, a first hinge, a second body, a second hinge, a third body, and an input module is provided. The second body is pivotally connected to the first body via the first hinge. The third body is pivotally connected to the second body via the second hinge, and the second body is located between the first body and the third body. The input module is slidably disposed on the third body and covers the second body. As the input module is slid away from the second hinge, the second body is moved out of the input module.

Abstract: Disclosed herein is an isolated strain of Roseburia hominis HGM001, which is deposited at Deutsche Sammlung von Mikroorganismen and Zellkulturen GmbH under an accession number DSM 34119. A method for producing butyric acid using the isolated strain of Roseburia hominis HGM001, a fermented culture produced by the method, and a method for alleviating an inflammatory disorder using the fermented culture are also disclosed.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a reference circuit that generates a first reference with a first non-zero temperature coefficient and a second reference with a second temperature coefficient having a different magnitude than the first non-zero temperature coefficient. A detector circuit on the integrated circuit, having temperature and process variation compensation, converts a difference between the first and second references into a digital signal indicating temperature on the integrated circuit.

Abstract: A supporting device is adapted to be mounted on a rack and includes a longitudinal portion, a first mounting portion, and an elastic member. The first mounting portion and the elastic member are both provided on the longitudinal portion. The elastic member is configured to be in one of a locking state and a non-locking state. The elastic member is provided with a second mounting portion. When the first mounting portion is mounted on the rack and the elastic member is in the non-locking state, the second mounting portion is not mounted on the rack. When the first mounting portion is mounted on the rack and the elastic member is in the locking state, the second mounting portion is mounted on the rack.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A slide rail assembly includes a first rail, a second rail, a third rail, a fourth rail and a fifth rail. The second rail and the third rail are respectively movable relative to the first rail. Each of the second rail and the third rail is formed with a passage. The fourth rail and the fifth rail are configured to be accommodated in the passages of the second rail and the third rail respectively.

Abstract: A slide rail assembly comprises a first rail, a second rail and a handle. When the handle is moved from a first operating position to a second operating position, the handle is configured to unlock the second rail relative to the first rail at a predetermined position.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: A semiconductor package includes a semiconductor die having a first surface and a second surface opposite to the first surface, a conductive wiring layer stacked with the semiconductor die and proximal to the first surface, an encapsulant encapsulating the semiconductor die and stacked with the conductive wiring layer, and a replacement structure exposing from the encapsulant and being free of fillers. A method for manufacturing the semiconductor package is also disclosed in the present disclosure.

Abstract: A semiconductor package includes a semiconductor die having a first surface and a second surface opposite to the first surface, a conductive wiring layer stacked with the semiconductor die and proximal to the first surface, an encapsulant encapsulating the semiconductor die and stacked with the conductive wiring layer, and a replacement structure exposing from the encapsulant and being free of fillers. A method for manufacturing the semiconductor package is also disclosed in the present disclosure.