Abstract: A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a gate electrode disposed in an insulating material layer, a ferroelectric dielectric layer disposed over the gate electrode, a metal oxide semiconductor layer disposed over the ferroelectric dielectric layer, a source feature disposed over the metal oxide semiconductor layer, wherein the source feature has a first dimension, and a source extension. The source extension includes a first portion disposed over the source feature, wherein the first portion has a second dimension that is greater than the first dimension. The source extension also includes a second portion extending downwardly from the first portion to an elevation that is lower than a top surface of the source feature.

Abstract: The present invention provides a wafer container and a gas diffusion device applied in the wafer container. The wafer container includes a shell, and all components included and applied on the shell are made of thermal resistance materials. The gas diffusion device and the wafer container, when assembled together, utilize a coupling structure and a collar as a protection mechanism for the gas diffusion device. The gas diffusion device has a buffering chamber that provides a buffering tolerance and a communicating space for the gas before the gas enters an interior space of the wafer container.

Abstract: The present invention provides a reticle pod comprising a lower cover and a support mechanism. The lower cover includes a carrying surface and a plurality of securing seats distributed on the carrying surface. The support mechanism includes a supporting portion extending upward for supporting a reticle or a reticle carrier, and a securing portion opposite the supporting portion, wherein the securing portion is detachably connected with a corresponding securing seat, so that the support mechanism can be selectively installed on the lower cover.

Abstract: The invention discloses a substrate container including a shell and a cover member. The shell defines an accommodation space, and has a bottom and at least one exhaust hole formed on the bottom, wherein the exhaust hole is adjacent to an opening of the shell. The cover member is mounted to the bottom of the shell, and the cover member and the bottom of the shell define a negative pressure cavity above and communicating with the at least one exhaust hole. An elongated exhaust hole is defined above the negative pressure cavity, and communicates with the negative pressure cavity and the accommodation space. A gas in the accommodation space is exhausted sequentially from the elongated exhaust hole, the negative pressure cavity and the at least one exhaust hole.

Abstract: A display device includes an array substrate, a first organic layer, a second organic layer, a third organic layer, and a plurality of micro lenses. The array substrate has a plurality of light-emitting elements disposed thereon. The first organic layer is on the array substrate and covers the light-emitting elements. The second organic layer is on the first organic layer. The third organic layer is on the second organic layer. The third organic layer has a portion extending downward through the second organic layer. The micro lenses are over the third organic layer and disposed corresponding to the light-emitting elements, respectively.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a gate, a ferroelectric layer disposed on the gate; a first channel layer disposed on the ferroelectric layer, a second channel layer disposed on the ferroelectric layer, and source and drain regions disposed on the first channel layer. The first channel layer includes a first thickness and the second channel layer includes a second thickness. A ratio of the first thickness and the second thickness is less than ?.

Abstract: A reticle pressing device is applied to a reticle box used to accommodate a reticle. The reticle pressing device includes a reticle pressing board, a pressing member, and an adjusting member. The pressing member is disposed on the reticle pressing board. The pressing member includes a pushing portion. The pushing portion pushes the reticle pressing board correspondingly according to movement range of the pressing member toward the reticle pressing board, so that the reticle pressing board moves laterally relative to the pressing member. The adjusting member is disposed in the reticle pressing board through the pressing member. The adjusting member is used to adjust the movement range of the pressing member, so that the pushing portion pushes toward the reticle pressing board until the reticle is fixed, or adjusts the pushing portion of the pressing member to move away from the reticle and release pushing force.

Abstract: A detachable urethral catheterization device for guiding a movement of a urinary catheter is provided. The detachable urethral catheterization device includes a conveying body and a clamping module. The conveying body includes a driving module, a conveying channel, and a module accommodating groove in communication with the conveying channel, the module accommodating groove including a first coupling component. The clamping module coupled to the driving module, and having a second coupling component, where the second coupling component is detachably coupled to the first coupling component in the module accommodating groove, and where the driving module is configured to control the clamping module to clamp the urinary catheter and move the urinary catheter in the conveying channel and the module accommodating groove.

Abstract: A semiconductor memory device includes a stack of alternating insulating layers and first conductive layers disposed over a substrate; a plurality of memory cell strings penetrating the stack over the substrate, each memory cell string comprising a central portion extending through the stack, a semiconductor layer surrounding the central portion, and a ferroelectric layer surrounding the semiconductor layer, and the central portion comprising a channel isolation structure and a second conductive layer and a third conductive layer at two sides of the channel isolation structure; and a plurality of cell isolation structures penetrating the conductive layers and the insulating layers over the substrate and disposed between two memory cell strings, each cell isolation structure comprising a top portion and a bottom portion adjoined to the top portion and different from the top portion.

Abstract: Provided is a reticle pod with a detachable supporting mechanism, which is suitable for a dual pod, including an outer pod and an inner pod received therein, the inner pod including: a base, and at least a supporting mechanism, mounted on the base. The supporting mechanism includes: a supporting assembly, connected to a mounting interface of the base, the supporting assembly includes a seat, at least one limiting post, and a mounting hole, the at least one limiting post connects to the seat, the mounting hole penetrates the base and not a circular hole; and a supporting element, having a matching structure, so that the supporting element detachably received in the mounting hole.

Abstract: A door device includes a door body and a substrate retaining assembly. The substrate retaining assembly is disposed on a side of the door body. The substrate retaining assembly includes a retaining body and a plurality of retaining members. The retaining members are disposed on the retaining body and arranged at intervals. Each of the retaining members includes two elastic arms and a clamping structure. The clamping structure includes a clamping body, a clamping groove, and at least one relief portion. The clamping body is connected between the two elastic arms. The clamping groove is located on the clamping body and is communicated with adjacent ends of the elastic arms. The relief portion and the clamping groove are communicated to each other.

Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes first and second stacking structures, isolation pillars, gate dielectric layers, channel layers and conductive pillars. The stacking structures are laterally spaced apart from each other. The stacking structures respectively comprises alternately stacked insulating layers and conductive layers. The isolation pillars laterally extend between the stacking structures. The isolation pillars further protrude into the stacking structures, and a space between the stacking structures is divided into cell regions. The gate dielectric layers are respectively formed in one of the cell regions, and cover opposing sidewalls of the stacking structures and sidewalls of the isolation pillars. The channel layers respectively cover an inner surface of one of the gate dielectric layers.

Abstract: An inspection system and an inspection method for at least one supporting beam include the steps of setting a lateral surface of one supporting beam as a reference point for detecting an offset amount; applying a predetermined force respectively to the supporting beams in sequence in a moving direction; detecting the offset amount of the supporting beam as applied by the predetermined force; and, acquiring an inspection result by a calculation based on the reference point and the offset amount. The inspection system includes a pushing member, a driving module, and an offset sensor. The pushing member is used for applying a predetermined force to the supporting beam. The driving module connects to the pushing member for driving the pushing member to move toward the supporting beam. The offset sensor is used for detecting an offset amount of the supporting beam as applied by the predetermined force.